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AN3432 датащи(PDF) 7 Page - STMicroelectronics |
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AN3432 датащи(HTML) 7 Page - STMicroelectronics |
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7 / 24 page ![]() AN3432 Photocurrent production basics of silicon solar cells Doc ID 019041 Rev 1 7/24 Figure 4. Hot spot phenomenon There is no risk of hot spot while: Equation 7 To eliminate the hot spot phenomenon, a dedicated circuit should bypass the partially shaded module and eventually it should maintain the operation of the other PV modules creating a path for their current. V cell I(V) V G -Vs R Load 1000W/m² Voltage (V) -Vs Shadowed cell characteristics I(V) V G (n-1) V oc_u (n-1) illuminated cell characteristics -Vc Hot spot 0 ) ( · · · ) ( ) ( V I V P V I V P V I R V V c c s s Load s G = = = - Voc_u c s P P < |
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