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AN3432 датащи(PDF) 13 Page - STMicroelectronics

номер детали AN3432
подробное описание детали  How to choose a bypass diode for a silicon panel junction box
PDF  24 Pages
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производитель  STMICROELECTRONICS [STMicroelectronics]
домашняя страница  http://www.st.com
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AN3432 датащи(HTML) 13 Page - STMicroelectronics

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AN3432
Application constraints
Doc ID 019041 Rev 1
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Figure 9.
STPS20L45C and STPS2045C reverse losses versus junction
temperature
The reverse losses curves, shown in Figure 9, are calculated in the following application
conditions:
Ppanel = 400 W at Tamb = 85 °C, 3 bypass diodes, VOC(STC) = 85 V
To calculate the maximum reverse voltage VRRM, use the method described in
Section 2.3.2.
VR = 25 V, Tj = Tamb
Prev_2045(85 °C) = 0.014 W
Prev_20L45(85 °C) = 0.13 W
In application conditions, the solar module efficiency lost due to bypass diodes is around
0.05% for STPS20L45 and 0.004% for STPS2045.
The diode with the lower forward voltage (STPS20L45C) has the drawback of a higher
leakage current. The consequence is not visible on power module efficiency due to the low
level contribution of the bypass diode reverse losses.
However, it impacts the diode choice since the leakage current is directly linked with thermal
runaway risk. To avoid this phenomenon the choice of a diode with higher forward voltage is
mandatory as described in Section 3.1.2.
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Prev (W)
STPS2045C
STPS20L45C
VR = 25 V
Tj (°C)



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