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AN3432 датащи(PDF) 10 Page - STMicroelectronics |
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AN3432 датащи(HTML) 10 Page - STMicroelectronics |
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10 / 24 page ![]() Bypass diode inside the junction box AN3432 10/24 Doc ID 019041 Rev 1 Equation 8 Figure 7. Maximum numbers of solar cells to bridge with bypass diode Considering poly-silicon solar cells with a breakdown voltage Vc of 12 V and a bypass diode forward voltage VF of 0.5 V, the maximum number nmax of solar cells bridged by the bypass diode is 24. This is the common setting used by module manufacturers. 2.3.2 VRRM of bypass diode Knowing the number of bypass diodes nd and the Voc of the panel, the maximum repetitive reverse voltage (VRRM) of the bypass diode can be calculated. In the worst case, the bypass diode reverse voltage is equal to the open circuit voltage (Voc_max) of the solar panel divided by the number of bypass diodes nd. Voc_max is the open circuit voltage at the minimum ambient temperature with the maximum irradiance. Equation 9 where dt% = average voltage dispersion, which depends on the panel manufacturer. Most of the time, the junction box manufacturer is different from the solar panel manufacturer. Then the junction box is not dedicated to one panel, but it could be used with any solar panel power range up to 400 W. For a 400 W panel with a total Voc of 85 V in STC, its highest voltage is Voc (-40°C) = 107 V (see Section 1.3.2). If the deviation tolerance dt% is 20% (average dispersion estimate given in the literature) and 3 bypass diodes are used in the junction box, the reverse voltage of each bypass diode is 43 V, then V = 45 V is selected. This is probably the reason why the diode with a VRRM = 45 V is the most widely used in the junction boxes. 1 5 . 0 V V n 5 . 0 ) 1 n ( V V V 5 . 0 V V V With V ) 1 n ( V V F c max max c F u _ oc c s u _ oc s bypass + − < • − − < ≈ < • − − = V V F bypass = Vbypass =VF 0.5V 0.5V Vs 0.5V Vocmax = Voc(Tjmin) · (1 + dt%) VRRM > Vocmax nd |
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