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AN3432 датащи(PDF) 10 Page - STMicroelectronics

номер детали AN3432
подробное описание детали  How to choose a bypass diode for a silicon panel junction box
PDF  24 Pages
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производитель  STMICROELECTRONICS [STMicroelectronics]
домашняя страница  http://www.st.com
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Bypass diode inside the junction box
AN3432
10/24
Doc ID 019041 Rev 1
Equation 8
Figure 7.
Maximum numbers of solar cells to bridge with bypass diode
Considering poly-silicon solar cells with a breakdown voltage Vc of 12 V and a bypass diode
forward voltage VF of 0.5 V, the maximum number nmax of solar cells bridged by the bypass
diode is 24. This is the common setting used by module manufacturers.
2.3.2
VRRM of bypass diode
Knowing the number of bypass diodes nd and the Voc of the panel, the maximum repetitive
reverse voltage (VRRM) of the bypass diode can be calculated. In the worst case, the bypass
diode reverse voltage is equal to the open circuit voltage (Voc_max) of the solar panel divided
by the number of bypass diodes nd. Voc_max is the open circuit voltage at the minimum
ambient temperature with the maximum irradiance.
Equation 9
where dt% = average voltage dispersion, which depends on the panel manufacturer.
Most of the time, the junction box manufacturer is different from the solar panel
manufacturer. Then the junction box is not dedicated to one panel, but it could be used with
any solar panel power range up to 400 W.
For a 400 W panel with a total Voc of 85 V in STC, its highest voltage is Voc (-40°C) = 107 V
(see Section 1.3.2). If the deviation tolerance dt% is 20% (average dispersion estimate
given in the literature) and 3 bypass diodes are used in the junction box, the reverse voltage
of each bypass diode is 43 V, then V = 45 V is selected.
This is probably the reason why the diode with a VRRM = 45 V is the most widely used in the
junction boxes.
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