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AN3432 датащи(PDF) 21 Page - STMicroelectronics

номер детали AN3432
подробное описание детали  How to choose a bypass diode for a silicon panel junction box
PDF  24 Pages
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производитель  STMICROELECTRONICS [STMicroelectronics]
домашняя страница  http://www.st.com
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AN3432 датащи(HTML) 21 Page - STMicroelectronics

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AN3432
Optimized bypass diode for a given solar panel or junction box
Doc ID 019041 Rev 1
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Step 3: Eliminate the risk of thermal runaway
As explained in the previous section, the most critical step is the thermal runaway risk that
occurs at the diode switching off. In the worst case, the diode will conduct a current very
close to Isc = 6.4 A and will switch off with a reverse bias voltage equal to
Voc (85 °C)/ 3 = 64.83 / 3 = 21.61 V.
The power conduction losses calculation gives:
With:
The power reverse losses are given by the following equation:
Then we apply the thermal law in order to find the junction temperature at switching time.
Thermal law and power conduction losses curves cross gives the junction temperature at
switching time in Figure 16.
Figure 16.
STPS3045C thermal runaway risk analysis
The junction temperature at switching off is 164 °C. At this junction temperature, the reverse
losses are below the conduction losses. In conclusion, there is no risk of thermal runaway
with STPS3045CGC.
sc
j
sc
F
j
cond
I
T
,
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(
V
)
T
(
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)
25
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)
T
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)
25
T
(
10
3
.
2
51
.
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)
T
(
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I
)
T
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T
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4
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125
Tj
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j
rev
e
10
51
.
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T
(
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=
j
Thermal
) =
T
(
P
(Tj - 85 °C)
30
0
1
2
3
4
5
6
7
8
9
10
-40
-20
0
20
40
60
80
100
120
140
180
200
P(W)
Pthermal(Tj )
Tj@t 0=164 °C
No thermal runaway risk
Prev(Tj@t 0)< Pcond (Tj@t 0)
Tj (°C)
160



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