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28F008SA датащи(PDF) 4 Page - Intel Corporation

номер детали 28F008SA
подробное описание детали  8-MBIT (1-MBIT x 8) FlashFileTM MEMORY
PDF  33 Pages
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производитель  INTEL [Intel Corporation]
домашняя страница  http://www.intel.com
Logo INTEL - Intel Corporation

28F008SA датащи(HTML) 4 Page - Intel Corporation

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28F008SA
Table 1 Pin Description
Symbol
Type
Name and Function
A0–A19
INPUT
ADDRESS INPUTS
for memory addresses Addresses are internally
latched during a write cycle
DQ0–DQ7
INPUTOUTPUT
DATA INPUTOUTPUTS
Inputs data and commands during Command
User Interface write cycles outputs data during memory array Status
Register and Identifier read cycles The data pins are active high and
float to tri-state off when the chip is deselected or the outputs are
disabled Data is internally latched during a write cycle
CE
INPUT
CHIP ENABLE
Activates the device’s control logic input buffers
decoders and sense amplifiers CE
is active low CE
high deselects
the memory device and reduces power consumption to standby levels
RP
INPUT
RESETDEEP POWERDOWN
Puts the device in deep powerdown
mode RP
is active low RP
high gates normal operation RP
also
locks out block erase or byte write operations when active low providing
data protection during power transitions RP
active resets internal
automation Exit from Deep Powerdown sets device to read-array mode
OE
INPUT
OUTPUT ENABLE
Gates the device’s outputs through the data buffers
during a read cycle OE
is active low
WE
INPUT
WRITE ENABLE
Controls writes to the Command User Interface and
array blocks WE
is active low Addresses and data are latched on the
rising edge of the WE
pulse
RYBY
OUTPUT
READYBUSY
Indicates the status of the internal Write State
Machine When low it indicates that the WSM is performing a block
erase or byte write operation RYBY
high indicates that the WSM is
ready for new commands block erase is suspended or the device is in
deep powerdown mode RYBY
is always active and does NOT float
to tri-state off when the chip is deselected or data outputs are disabled
VPP
BLOCK ERASEBYTE WRITE POWER SUPPLY
for erasing blocks of
the array or writing bytes of each block
NOTE
With VPP k VPPLMAX memory contents cannot be altered
VCC
DEVICE POWER SUPPLY (5V g10% 5V g5%)
GND
GROUND
4



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