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28F008SA датащи(PDF) 17 Page - Intel Corporation |
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28F008SA датащи(HTML) 17 Page - Intel Corporation |
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17 / 33 page ![]() 28F008SA 290429 – 10 Bus Command Comments Operation Write Erase Data e B0H Suspend Write Read Data e 70H Status Register Standby Check RYBY Read VOH e Ready VOL e Busy or Read Status Register Check SR7 1 e Ready 0 e Busy Toggle OE or CE to Update Status Register Standby Check SR6 1 e Suspended Write Read Array Data e FFH Read Read array data from block other than that being erased Write Erase Resume Data e D0H Figure 9 Erase SuspendResume Flowchart Power Supply Decoupling Flash memory power switching characteristics re- quire careful device decoupling System designers are interested in 3 supply current issues standby current levels (ISB) active current levels (ICC) and transient peaks produced by falling and rising edges of CE Transient current magnitudes depend on the device outputs’ capacitive and inductive loading Two-line control and proper decoupling capacitor selection will suppress transient voltage peaks Each device should have a 01 mF ceramic capacitor connected between each VCC and GND and be- tween its VPP and GND These high frequency low inherent-inductance capacitors should be placed as close as possible to package leads Additionally for every 8 devices a 47 mF electrolytic capacitor should be placed at the array’s power supply con- nection between VCC and GND The bulk capacitor will overcome voltage slumps caused by PC board trace inductances VPP Trace on Printed Circuit Boards Writing flash memories while they reside in the tar- get system requires that the printed circuit board designer pay attention to the VPP power supply trace The VPP pin supplies the memory cell current for writing and erasing Use similar trace widths and layout considerations given to the VCC power bus Adequate VPP supply traces and decoupling will de- crease VPP voltage spikes and overshoots 17 |
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