28F008SA

EXTENDED TEMPERATURE OPERATION

ALTERNATIVE CE -CONTROLLED WRITES

Versions

Unit

Symbol

Parameter

Notes

Min

Max

Write Cycle Time

100

ns

RP

High Recovery to CE

Going Low

2

1

m

s

WE

Setup to CE

Going Low

0

ns

CE

Pulse Width

50

ns

Going High

2

100

ns

Address Setup to CE

Going High

3

40

ns

Data Setup to CE

Going High

4

40

ns

Data Hold from CE

High

5

ns

Address Hold from CE

High

5

ns

WE

Hold from CE

High

0

ns

CE

Pulse Width High

25

ns

CE

High to RYBY

Going Low

100

ns

Duration of Byte Write Operation

5

6

m

s

Duration of Block Erase Operation

5

03

sec

Write Recovery before Read

0

m

s

High

2 5

0

ns

NOTES

1 Chip-Enable Controlled Writes Write operations are driven by the valid combination of CE

and WE

In systems where

CE

defines the write pulsewidth (within a longer WE

timing waveform) all setup hold and inactive WE

times should be

measured relative to the CE

waveform

2 Sampled not 100% tested

e

6 See High Speed AC InputOutput Reference Waveforms and High Speed AC Testing Load Circuits for testing characteris-

tics

7 See AC InputOutput Reference Waveforms and AC Testing Load Circuits for testing characteristics

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