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поискавой системы для электроныых деталей |
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поискавой системы для электроныых деталей |
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28F008SA датащи(PDF) 30 Page - Intel Corporation |
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28F008SA датащи(HTML) 30 Page - Intel Corporation |
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30 / 33 page  28F008SA ALTERNATIVE CE -CONTROLLED WRITES Versions VCCg5% 28F008SA-85(6) Unit VCCg10% 28F008SA-85(7) 28F008SA-120(7) Symbol Parameter Notes Min Max Min Max Min Max tAVAV tWC Write Cycle Time 85 90 120 ns tPHEL tPS RP High Recovery to 2 1 1 1 m s CE Going Low tWLEL tWS WE Setup to CE Going 0 0 0 ns Low tELEH tCP CE Pulse Width 50 50 50 ns tVPEH tVPS VPP Setup to CE Going 2 100 100 100 ns High tAVEH tAS Address Setup to CE 340 40 40 ns Going High tDVEH tDS Data Setup to CE Going 4 40 40 40 ns High tEHDX tDH Data Hold from CE High 5 5 5 ns tEHAX tAH Address Hold from CE 55 5 ns High tEHWH tWH WE Hold from CE High 0 0 0 ns tEHEL tEPH CE Pulse Width High 25 25 25 ns tEHRL CE High to RYBY 100 100 100 ns Going Low tEHQV1 Duration of Byte Write 5 6 6 6 m s Operation tEHQV2 Duration of Block Erase 5 03 03 03 sec Operation tEHGL Write Recovery before 0 0 0 m s Read tQVVL tVPH VPP Hold from Valid SRD 2 5 0 0 0 ns RYBY High NOTES 1 Chip-Enable Controlled Writes Write operations are driven by the valid combination of CE and WE In systems where CE defines the write pulsewidth (within a longer WE timing waveform) all setup hold and inactive WE times should be measured relative to the CE waveform 2 Sampled not 100% tested 3 Refer to Table 3 for valid AIN for byte write or block erasure 4 Refer to Table 3 for valid DIN for byte write or block erasure 5 Byte write and block erase durations are measured to completion (SR7 e 1 RYBY e VOH) VPP should be held at VPPH until determination of byte writeblock erase success (SR345 e 0) 6 See High Speed AC InputOutput Reference Waveforms and High Speed AC Testing Load Circuits for testing characteris- tics 7 See AC InputOutput Reference Waveforms and AC Testing Load Circuits for testing characteristics 30 |
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