28F008SA datasheet(2/33 Pages) INTEL

2 / 33 page

28F008SA

PRODUCT OVERVIEW

The

28F008SA

high-performance

8-Mbit

(8388608 bit) memory organized as 1 Mbyte

(1048576 bytes) of 8 bits each Sixteen 64-Kbyte

(65536 byte) blocks are included on the 28F008SA

A memory map is shown in Figure 6 of this specifica-

tion A block erase operation erases one of the six-

teen blocks of memory in typically 16 seconds in-

dependent of the remaining blocks Each block can

be independently erased and written 100000 cy-

cles Erase Suspend

mode allows system software

to suspend block erase to read data or execute

code from any other block of the 28F008SA

The 28F008SA is available in the 40-lead TSOP

(Thin Small Outline Package 12 mm thick) and 44-

lead PSOP

(Plastic Small Outline) packages Pin-

outs are shown in Figures 2 and 4 of this specifica-

tion

The Command User Interface serves as the inter-

face between the microprocessor or microcontroller

and the internal operation of the 28F008SA

Byte Write and Block Erase Automation

allow

byte write and block erase operations to be execut-

ed using a two-write command sequence to the

Command User Interface The internal Write State

Machine

(WSM) automatically executes the algo-

rithms and timings necessary for byte write and

block

erase

operations

including

verifications

thereby unburdening the microprocessor or micro-

controller Writing of memory data is performed in

byte increments typically within 9 ms an 80% im-

provement over current flash memory products IPP

byte write and block erase currents

are 10 mA

typical 30 mA maximum VPP byte write and

block erase voltage

is 114V to 126V

The Status Register indicates the status of the

WSM and when the WSM successfully completes

the desired byte write or block erase operation

The RYBY

output gives an additional indicator of

WSM activity providing capability for both hardware

signal of status (versus software polling) and status

masking (interrupt masking for background erase

for example) Status polling using RYBY

mini-

mizes both CPU overhead and system power con-

sumption When low RYBY

indicates that the

WSM is performing a block erase or byte write oper-

ation RYBY

high indicates that the WSM is ready

for new commands block erase is suspended or the

device is in deep powerdown mode

Maximum access time is 85 ns (tACC) over the com-

mercial temperature range (0 Cto a70 C) and over

VCC supply voltage range (45V to 55V and 475V to

525V) ICC active current (CMOS Read) is 20 mA

typical 35 mA maximum at 8 MHz

When the CE

and RP

pins are at VCC the ICC

CMOS Standby

mode is enabled

A Deep Powerdown mode is enabled when the

pin is at GND minimizing power consumption

and providing write protection ICC current in deep

powerdown is 020 mA typical Reset time of 400 ns

is required from RP

switching high until outputs are

valid to read attempts Equivalently the device has a

wake time of 1 ms from RP

high until writes to the

Command User Interface are recognized by the

28F008SA With RP

at GND the WSM is reset

and the Status Register is cleared

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