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AT697F датащи(PDF) 39 Page - ATMEL Corporation

номер детали AT697F
подробное описание детали  SPARC V8 High Performance Low-power 32-bit Architecture
PDF  176 Pages
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производитель  ATMEL [ATMEL Corporation]
домашняя страница  http://www.atmel.com
Logo ATMEL - ATMEL Corporation

AT697F датащи(HTML) 39 Page - ATMEL Corporation

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AT697F
7703E–AERO–08/11
SDRAM devices shall be 64 Mbit, 256 Mbit or 512 Mbit with 8 to 12 column-address bits,
up to 13 row-address bits and exclusively 4 internal data banks. Only 32-bit data bus
width is supported.
The SDRAMs address bus shall be connected to A[14:2] and the bank address to
A[16:15]. Devices with less than 13 address pins should only use the less significant
bits of A[14:2].
SDRAM banks map as follows:
SDCS*[0] and SDCS*[1] decode 2 contiguous banks with a common
programmable size (4 MB to 512 MB)
SDCS*[1:0] decode the upper half of the RAM area (0x60000000 -
0x7FFFFFFF) when the SRAM interface is enabled
SDCS*[1:0] decode the lower half of the RAM area (0x40000000 - 0x5FFFFFFF)
when the SRAM interface is disabled
The SDRAM interface is controlled in the memory configuration registers (MCFG2 and
MCFG3):
interface can be enabled/disabled (MCFG2.se)
bank size can be set from 4 MB to 512 MB (MCFG2.sdrbs)
column size can be set from 256 to 4096 (MCFG2.sdrcls)
commands can be sent to the devices (MCFG2.sdrcmd)
timings parameters can be set (MCFG2.sdrcas, MCFG2.trp and MCFG2.trfc)
auto-refresh can be enabled/disabled (MCFG2.sdrref) and programmed
(MCFG3.srcrv)
EDAC protection(1)(2) can be enabled/disabled (MCFG3.re)
Notes: 1. EDAC protection activation common to SRAM and SDRAM interfaces.
2. Read-modify-write on sub-word operations simultaneously activated with EDAC.
Initialization
After reset, the SDRAM controller automatically performs an SDRAM initialization
sequence. It consists in a PRECHARGE cycle, two AUTO-REFRESH cycles and a LOAD-
MODE-REG cycle on both SDRAM banks simultaneously.
The controller programs the SDRAM to use page burst on read and single location
access on write.
Timing Parameters
The SDRAM interface parameters can be programmed so read/write access to SDRAM
devices is optimized:
Table 10. SDRAM Programmable Timing Parameters
CAS latency, RAS/CAS delay
tCAS, tRCD
2 - 3
clocks
MCFG2.sdrcas
Precharge to activate
tRP
2 - 3
clocks
MCFG2.trp
Auto-refresh command period
tRFC
3 - 11
clocks
MCFG2.trfc
Auto-refresh interval
10 - 32768
clocks
MCFG3.srcrv
Refresh
The SDRAM controller embeds a refresh module. When enabled (MCFG2.sdrref = 1),
it periodically issues an AUTO-REFRESH command to both SDRAM banks with a pro-
grammable period (MCFG3.srcrv).
Function
Parameter
Range
Unit
Control



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