IO20PDB0V0 datasheet(82/197 Pages) MICROSEMI

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SmartFusion DC and Switching Characteristics

2- 70

R e v i sio n 1 2

Table 2-88 • RAM512X18

Worst Commercial-Case Conditions: TJ = 85°C, Worst-Case VCC = 1.425 V

Parameter

Description

–1

Std.

Units

tAS

Address setup time

0.25

0.30

tAH

Address hold time

0.00

tENS

REN, WEN setup time

0.09

0.11

tENH

REN, WEN hold time

0.06

0.07

tDS

Input data (WD) setup time

0.19

0.22

tDH

Input data (WD) hold time

0.00

tCKQ1

Clock High to new data valid on RD (output retained, WMODE = 0)

2.19

2.63

tCKQ2

Clock High to new data valid on RD (pipelined)

0.91

1.09

tC2CRWH1

Address collision clk-to-clk delay for reliable read access after write on same

address—applicable to opening edge

0.38

0.43

tC2CWRH1

Address collision clk-to-clk delay for reliable write access after read on same

address—applicable to opening edge

0.44

0.50

tRSTBQ

RESET Low to data out Low on RD (flow-through)

0.94

1.12

RESET Low to data out Low on RD (pipelined)

0.94

1.12

tREMRSTB

RESET removal

0.29

0.35

tRECRSTB

RESET recovery

1.52

1.83

tMPWRSTB

RESET minimum pulse width

0.22

tCYC

Clock cycle time

3.28

FMAX

Maximum clock frequency

305

MHz

Notes:

1. For more information, refer to the Simultaneous Read-Write Operations in Dual-Port SRAM for Flash-Based cSoCs and

FPGAs application note.

2. For the derating values at specific junction temperature and voltage supply levels, refer to Table 2-7 on page 2-9 for

derating values.

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