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поискавой системы для электроныых деталей |
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поискавой системы для электроныых деталей |
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S29GL01GS датащи(PDF) 83 Page - SPANSION |
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S29GL01GS датащи(HTML) 83 Page - SPANSION |
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83 / 106 page  October 9, 2013 S29GL_128S_01GS_00_08 GL-S MirrorBit® Family 83 Data She e t 10.4.2 Asynchronous Write Operations Note: 1. Not 100% tested. Figure 10.8 Back to Back Write Operation Timing Diagram Table 10.7 Write Operations Parameter Description VIO = 2.7V to VCC VIO = 1.65V to VCC Unit JEDEC Std tAVAV tWC Write Cycle Time (Note 1) Min 60 ns tAVWL tAS Address Setup Time Min 0 ns tASO Address Setup Time to OE# Low during toggle bit polling Min 15 ns tWLAX tAH Address Hold Time Min 45 ns tAHT Address Hold Time From CE# or OE# High during toggle bit polling Min 0 ns tDVWH tDS Data Setup Time Min 30 ns tWHDX tDH Data Hold Time Min 0 ns tOEPH Output Enable High during toggle bit polling or following status register read. Min 20 ns tGHWL tGHWL Read Recovery Time Before Write (OE# High to WE# Low) Min 0 ns tELWL tCS CE# Setup Time Min 0 ns tWHEH tCH CE# Hold Time Min 0 ns tWLWH tWP WE# Pulse Width Min 25 ns tWHWL tWPH WE# Pulse Width High Min 20 ns Amax-A0 CE# OE# WE# DQ15-DQ0 tDS tDH tWP tAS tAH tWPH tWC tCS tCH |
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