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LP3906 датащи(PDF) 5 Page - Texas Instruments

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номер детали LP3906
подробное описание детали  Dual High-Current Step-Down DC/DC and Dual Linear Regulator with I2C ompatible
PDF  47 Pages
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производитель  TI [Texas Instruments]
домашняя страница  http://www.ti.com
Logo TI - Texas Instruments

LP3906 датащи(HTML) 5 Page - Texas Instruments

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LP3906
www.ti.com
SNVS456M – AUGUST 2006 – REVISED MAY 2013
Pin Descriptions(1)
Pin Name
Pin No.
I/O
Type
Description
VIN2
1
I
PWR
Power in from either DC source or Battery to Buck 2
SW2
2
O
PWR
Buck2 switcher output pin
GND_SW2
3
G
G
Buck2 NMOS Power Ground
GND_C
4
G
G
Non switching core ground pin
GND_SW1
5
G
G
Buck1 NMOS Power Ground
SW1
6
O
PWR
Buck1 switcher output pin
VIN1
7
I
PWR
Power in from either DC source or Battery to buck 1
SDA
8
I/O
D
I2C Data (Bidirectional)
SCL
9
I
D
I2C Clock
EN_T
10
I
D
Enable for preset power on sequence.
FB1
11
I
A
Buck1 input feedback terminal
AVDD
12
I
PWR
Analog Power for Buck converters.
VINLDO1
13
I
PWR
Power in from either DC source or Battery to input terminal of LDO1
LDO1
14
O
PWR
LDO1 Output
ENLDO1
15
I
D
LDO1 enable pin, a logic HIGH enables the LDO1
ENLDO2
16
I
D
LDO2 enable pin, a logic HIGH enables the LDO2
GND_L
17
G
G
LDO Ground
LDO2
18
O
PWR
LDO2 Output
VINLDO2
19
I
PWR
Power in from either DC source or battery to input terminal to LDO2
VinLDO12
20
I
PWR
Analog Power for Internal Functions (VREF, BIAS, I2C, Logic)
FB2
21
I
A
Buck2 input feedback terminal
ENSW1
22
I
D
Enable Pin for Buck1 switcher, a logic HIGH enables Buck1
SYNC
23
I
D
Frequency Synchronization pin which allows the user to connect an external
clock signal PLL to synchronize the PMIC internal oscillator.
ENSW2
24
I
D
Enable Pin for Buck2 switcher, a logic HIGH enables Buck2
DAP
DAP
GND
GND
Connection isn't necessary for electrical performance, but it is recommended
for better thermal dissipation.
(1)
A: Analog Pin D: Digital Pin G: Ground Pin PWR: Power Pin I: Input Pin I/O: Input/Output Pin O: Output Pin
These devices have limited built-in ESD protection. The leads should be shorted together or the device placed in conductive foam
during storage or handling to prevent electrostatic damage to the MOS gates.
Copyright © 2006–2013, Texas Instruments Incorporated
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5
Product Folder Links: LP3906



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