AM3703CUS datasheet(117/280 Pages) TI

117 / 280 page

AM3715, AM3703

www.ti.com

SPRS616F

– JUNE 2010 – REVISED AUGUST 2011

Electrical Characteristics

NOTE

For more information, see the Power Reset and Clock Management / PRCM Environment

section of the AM/DM37x Multimedia Device Technical Reference Manual (literature number

SPRUGN4).

3.1

Absolute Maximum Ratings

Stresses beyond those listed as absolute maximum ratings may cause permanent damage to the device.

These are stress ratings only, and functional operation of the device at these or any other conditions

beyond those listed under "Recommended Operating Conditions" is not implied. Exposure to absolute

maximum rated conditions for extended periods may affect device reliability.

Table 3-1. Absolute Maximum Rating over Junction Temperature Range

PARAMETER

MIN

MAX

UNIT

vdd_mpu_iva

Supply voltage range for MPU

–0.5

1.5

vdd_core

Supply voltage range for core domain

–0.5

1.5

vdda_wkup_bg_bb

Supply voltage range for wake-up domain (internal

–0.5

2.1

LDO)

vdda_dplls_dll

Supply voltage for MPU, Core DPLLs, and DLL

–0.5

2.1

vdda_dpll_per

Supply voltage for DPLLs (peripherals)

–0.5

2.1

vdds_sram

Supply voltage for SRAM LDOs

–0.5

2.1

vdda_dac

Supply voltage for video buffers and DAC

–0.5

2.1

vdds

Supply voltage for 1.8-V I/O macros

–0.5

2.1

vdds_mem

Supply voltage for memory buffers

–0.5

2.1

vdds_mmc1

Supply voltage range for mmc1 dual voltage IOs

–0.5

3.8

vdds_x

Supply voltage range for dual voltage GPIOs

–0.5

3.8

JTAG(9)

200

VESD

ESD stress

HBM (Human

CAM(6)

400

voltage(1)

Body Model)(2)

GPMC(8)

500

Other signals

1000

CDM (Charged Device Model)(3)

250

IIOI

Current-pulse injection on each IO pin(5)

200

Iclamp

Clamp current for an input or output

–20

TSTG

(4)

Storage temperature range

–65

150

°C

(1) Electrostatic discharge (ESD) to measure device sensitivity/immunity to damage caused by electrostatic discharges into the device.

(2) Level listed above is the passing level per ANSI/ESDA/JEDEC JS-001-2010. JEDEC document JEP155 states that 500V HBM allows

safe manufacturing with a standard ESD control process, and manufacturing with less than 500V HBM is possible if necessary

precautions are taken. Pins listed as 1000V may actually have higher performance.

(3) Level listed above is the passing level per EIA-JEDEC JESD22-C101E. JEDEC document JEP157 states that 250V CDM allows safe

manufacturing with a standard ESD control process. Pins listed as 250V may actually have higher performance.

(4) For tape and reel the storage temperature range is [

–10°C; +50°C] with a maximum relative humidity of 70%. It is recommended

returning to ambient room temperature before usage.

(5) Each device is tested with an IO pin injection of 200 mA with a stress voltage of 1.5 times the maximum Vdd at room temperature.

(6) Corresponding signals: cam_d0, cam_d1, cam_d6, cam_d7, cam_d8, cam_d9. Refer to Multiplexing Characteristicsto determine the ball

information per package.

(7) Corresponding signals: dss_data0, dss_data1, dss_data2, dss_data3, dss_data4, dss_data5. Refer to Multiplexing Characteristics to

determine the ball information per package.

(8) Corresponding signals: All 46 GPMC interface signals (vdds_mem is not included to this exception list). Refer to Multiplexing

Characteristics to determine the ball information per package.

(9) Corresponding signals: All 8 JTAG interface signals (jtag_emu0, jtag_emu1, jtag_ntrst, jtag_rtck, jtag_tck, jtag_tdi, jtag_tdo,

jtag_tms_tmsc). Refer to Multiplexing Characteristics to determine the ball information per package.

Electrical Characteristics

117

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