STM32L151RDT6 datasheet(95/140 Pages) STMICROELECTRONICS

95 / 140 page

STM32L151xD STM32L152xD

Electrical characteristics

Doc ID 022027 Rev 6

95/140

Prequalification trials

Most of the common failures (unexpected reset and program counter corruption) can be

reproduced by manually forcing a low state on the NRST pin or the oscillator pins for 1

second.

To complete these trials, ESD stress can be applied directly on the device, over the range of

specification values. When unexpected behavior is detected, the software can be hardened

to prevent unrecoverable errors occurring (see application note AN1015).

Electromagnetic Interference (EMI)

The electromagnetic field emitted by the device are monitored while a simple application is

executed (toggling 2 LEDs through the I/O ports). This emission test is compliant with

IEC 61967-2 standard which specifies the test board and the pin loading.

6.3.11

Absolute maximum ratings (electrical sensitivity)

Based on three different tests (ESD, LU) using specific measurement methods, the device is

stressed in order to determine its performance in terms of electrical sensitivity.

Electrostatic discharge (ESD)

Electrostatic discharges (a positive then a negative pulse separated by 1 second) are

applied to the pins of each sample according to each pin combination. The sample size

depends on the number of supply pins in the device (3 parts × (n+1) supply pins). This test

conforms to the JESD22-A114/C101 standard.

Table 46.

EMI characteristics

Symbol Parameter

Conditions

Monitored

frequency band

Max vs. frequency range

Unit

4 MHz

voltage

range 3

16 MHz

voltage

range 2

32 MHz

voltage

range 1

SEMI

Peak level

VDD = 3.3 V,

TA = 25 °C,

LQFP100 package

compliant with IEC

61967-2

0.1 to 30 MHz

-6

-5

dBµV

30 to 130 MHz

-7

130 MHz to 1GHz

-7

SAE EMI Level

2.5

Table 47.

ESD absolute maximum ratings

Symbol

Ratings

Conditions

Class Maximum value(1)

Based on characterization results, not tested in production.

Unit

VESD(HBM)

Electrostatic discharge

voltage (human body model)

TA = +25 °C, conforming

to JESD22-A114

22000

VESD(CDM)

Electrostatic discharge

voltage (charge device model)

TA = +25 °C, conforming

to JESD22-C101

500

STM32L151RDT6 датащи(PDF) 95 Page - STMicroelectronics

STM32L151RDT6 датащи(HTML) 95 Page - STMicroelectronics

Html Pages

1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 19 20 21 22 23 24 25 26 27 28 29 30 31 32 33 34 35 36 37 38 39 40 41 42 43 44 45 46 47 48 49 50 51 52 53 54 55 56 57 58 59 60 61 62 63 64 65 66 67 68 69 70 71 72 73 74 75 76 77 78 79 80 81 82 83 84 85 86 87 88 89 90 91 92 93 94 95 96 97 98 99 100 ...More

датащи скачать

ссылки URL