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STM32L151RDT6 датащи(PDF) 56 Page - STMicroelectronics |
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STM32L151RDT6 датащи(HTML) 56 Page - STMicroelectronics |
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56 / 140 page ![]() Electrical characteristics STM32L151xD STM32L152xD 56/140 Doc ID 022027 Rev 6 6.3 Operating conditions 6.3.1 General operating conditions 6.3.2 Embedded reset and power control block characteristics The parameters given in the following table are derived from the tests performed under the ambient temperature condition summarized in Table 14. Table 13. Thermal characteristics Symbol Ratings Value Unit TSTG Storage temperature range –65 to +150 °C TJ Maximum junction temperature 150 °C Table 14. General operating conditions Symbol Parameter Conditions Min Max Unit fHCLK Internal AHB clock frequency 0 32 MHz fPCLK1 Internal APB1 clock frequency 0 32 fPCLK2 Internal APB2 clock frequency 0 32 VDD Standard operating voltage BOR detector disabled 1.65 3.6 V BOR detector enabled, at power on 1.8 3.6 BOR detector disabled, after power on 1.65 3.6 VDDA (1) 1. When the ADC is used, refer to Table 64: ADC characteristics. Analog operating voltage (ADC and DAC not used) Must be the same voltage as VDD (2) 2. It is recommended to power VDD and VDDA from the same source. A maximum difference of 300 mV between VDD and VDDA can be tolerated during power-up and operation. 1.65 3.6 V Analog operating voltage (ADC or DAC used) 1.8 3.6 P D Power dissipation at TA = 85 °C (3) 3. If TA is lower, higher PD values are allowed as long as TJ does not exceed TJ max (see Table 78: Thermal characteristics on page 134). UFBGA132 package 333 mW TA Temperature range Maximum power dissipation –40 85 °C Low power dissipation(4) 4. In low power dissipation state, TA can be extended to this range as long as TJ does not exceed TJ max (see Table 78: Thermal characteristics on page 134). –40 105 TJ Junction temperature range -40 °C ≤ TA ≤ 105 °C –40 105 °C |
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