DSPIC33FJMC202ESS datasheet(56/330 Pages) MICROCHIP

56 / 330 page

dsPIC33FJ32MC202/204 and dsPIC33FJ16MC304

DS70283K-page 56

5.2

RTSP Operation

The dsPIC33FJ32MC202/204 and dsPIC33FJ16MC304

Flash program memory array is organized into rows of 64

instructions or 192 bytes. RTSP allows the user

application to erase a page of memory, which consists of

eight rows (512 instructions) at a time, and to program

one row or one word at a time. Table 24-12 shows typical

erase and programming times. The 8-row erase pages

and single row write rows are edge-aligned from the

beginning of program memory, on boundaries of 1536

bytes and 192 bytes, respectively.

The program memory implements holding buffers that

can contain 64 instructions of programming data. Prior

to the actual programming operation, the write data

must be loaded into the buffers sequentially. The

instruction words loaded must always be from a group

of 64 boundary.

The basic sequence for RTSP programming is to set up

a Table Pointer, then do a series of TBLWT instructions

to load the buffers. Programming is performed by

setting the control bits in the NVMCON register. A total

of 64 TBLWTL and TBLWTH instructions are required

to load the instructions.

All of the table write operations are single-word writes

(two instruction cycles) because only the buffers are

written. A programming cycle is required for

programming each row.

5.3

Programming Operations

A complete programming sequence is necessary for

programming or erasing the internal Flash in RTSP

mode.

The

processor stalls (waits)

until

the

programming operation is finished.

The programming time depends on the FRC accuracy

(see Table 24-18, “AC Characteristics: Internal RC

Accuracy”) and the value of the FRC Oscillator Tuning

calculate the minimum and maximum values for the

Row Write Time, Page Erase Time, and Word Write

Cycle Time parameters (see Table 24-12, “DC

Characteristics: Program Memory”).

EQUATION 5-1:

PROGRAMMING TIME

For example, if the device is operating at +125

° C, the

FRC accuracy will be ±5%. If the TUN<5:0> bits (see

write time is equal to Equation 5-2.

EQUATION 5-2:

MINIMUM ROW WRITE

TIME

The maximum row write time is equal to Equation 5-3.

EQUATION 5-3:

MAXIMUM ROW WRITE

TIME

Setting the WR bit (NVMCON<15>) starts the opera-

tion, and the WR bit is automatically cleared when the

operation is finished.

5.4

Flash Memory Resources

Many useful resources are provided on the main prod-

uct page of the Microchip web site for the devices listed

in this data sheet. This product page, which can be

accessed using this link, contains the latest updates

and additional information.

5.4.1

KEY RESOURCES

• Section 5. “Flash Programming” (DS70191)

• Code Samples

• Application Notes

• Software Libraries

• Webinars

• All related dsPIC33F/PIC24H Family Reference

Manuals Sections

• Development Tools

5.5

Control Registers

Two SFRs are used to read and write the program

Flash memory: NVMCON and NVMKEY.

The NVMCON register (Register 5-1) controls which

blocks are to be erased, which memory type is to be

programmed and the start of the programming cycle.

NVMKEY is a write-only register that is used for write

protection. To start a programming or erase sequence,

the user application must consecutively write 0x55 and

0xAA to the NVMKEY register. Refer to Section 5.3

“Programming Operations” for further details.

7.37 MHz

FRC Accuracy

()%

FRC Tuning

()%

----------------------------------------------------------------------------------------------------------------------------

Note:

In the event you are not able to access

the product page using the link above,

enter

this

URL

your

browser:

http://www.microchip.com/wwwproducts/

Devices.aspx?dDocName=en530334

TRW

11064 Cycles

7.37 MHz

10.05

()

1 0.00375

–

()

------------------------------------------------------------------------------------------------ 1.435ms

TRW

11064 Cycles

7.37 MHz

10.05

–

()

1 0.00375

–

()

------------------------------------------------------------------------------------------------ 1.586ms

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