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DSPIC33FJMC202ESS датащи(PDF) 55 Page - Microchip Technology |
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DSPIC33FJMC202ESS датащи(HTML) 55 Page - Microchip Technology |
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55 / 330 page ![]() © 2007-2012 Microchip Technology Inc. DS70283K-page 55 dsPIC33FJ32MC202/204 and dsPIC33FJ16MC304 5.0 FLASH PROGRAM MEMORY The dsPIC33FJ32MC202/204 and dsPIC33FJ16MC304 devices contain internal Flash program memory for storing and executing application code. The memory is readable, writable and erasable during normal operation over the entire VDD range. Flash memory can be programmed in two ways: • In-Circuit Serial Programming™ (ICSP™) programming capability • Run-Time Self-Programming (RTSP) ICSP allows a dsPIC33FJ32MC202/204 and dsPIC33FJ16MC304 device to be serially programmed while in the end application circuit. This is done with two lines for programming clock and programming data (one of the alternate programming pin pairs: PGECx/PGEDx), and three other lines for power (VDD), ground (VSS) and Master Clear (MCLR). This allows customers to manufacture boards with unprogrammed devices and then program the digital signal controller just before shipping the product. This also allows the most recent firmware or a custom firmware to be pro- grammed. RTSP is accomplished using TBLRD (table read) and TBLWT (table write) instructions. With RTSP, the user application can write program memory data either in blocks or ‘rows’ of 64 instructions (192 bytes) at a time or a single program memory word, and erase program memory in blocks or ‘pages’ of 512 instructions (1536 bytes) at a time. 5.1 Table Instructions and Flash Programming Regardless of the method used, all programming of Flash memory is done with the table read and table write instructions. These allow direct read and write access to the program memory space from the data memory while the device is in normal operating mode. The 24-bit target address in the program memory is formed using bits <7:0> of the TBLPAG register and the Effective Address (EA) from a W register specified in the table instruction, as shown in Figure 5-1. The TBLRDL and the TBLWTL instructions are used to read or write to bits <15:0> of program memory. TBLRDL and TBLWTL can access program memory in both Word and Byte modes. The TBLRDH and TBLWTH instructions are used to read or write to bits <23:16> of program memory. TBLRDH and TBLWTH can also access program memory in Word or Byte mode. FIGURE 5-1: ADDRESSING FOR TABLE REGISTERS Note 1: This data sheet summarizes the features of the dsPIC33FJ32MC202/204 and dsPIC33FJ16MC304 devices. It is not intended to be a comprehensive refer- ence source. To complement the infor- mation in this data sheet, refer to Section 5. “Flash Programming” (DS70191) of the “dsPIC33F/PIC24H Family Refer- ence Manual” which is available from the Microchip web site (www.microchip.com) 2: Some registers and associated bits described in this section may not be available on all devices. Refer to Section 4.0 “Memory Organization” in this data sheet for device-specific register and bit information. 0 Program Counter 24 bits Program Counter TBLPAG Reg 8 bits Working Reg EA 16 bits Byte 24-bit EA 0 1/0 Select Using Table Instruction Using User/Configuration Space Select |
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