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SST25WF080 датащи(PDF) 11 Page - Microchip Technology

номер детали SST25WF080
подробное описание детали  8 Mbit 1.8V SPI Serial Flash
PDF  33 Pages
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производитель  MICROCHIP [Microchip Technology]
домашняя страница  http://www.microchip.com
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SST25WF080 датащи(HTML) 11 Page - Microchip Technology

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©2012 Silicon Storage Technology, Inc.
DS25024C
10/12
11
8 Mbit 1.8V SPI Serial Flash
SST25WF080
Not Recommended for New Designs
Instructions
Instructions are used to read, write (Erase and Program), and configure the SST25WF080. The
instruction bus cycles are 8 bits each for commands (Op Code), data, and addresses. The Write-
Enable (WREN) instruction must be executed prior to Byte-Program, Auto Address Increment (AAI)
programming, Sector-Erase, Block-Erase, Write-Status-Register, or Chip-Erase instructions. The com-
plete instructions are provided in Table 6. All instructions are synchronized off a high-to-low transition
of CE#. Inputs will be accepted on the rising edge of SCK starting with the most significant bit. CE#
must be driven low before an instruction is entered and must be driven high after the last bit of the
instruction has been shifted in (except for Read, Read-ID, and Read-Status-Register instructions). Any
low-to-high transition on CE#, before receiving the last bit of an instruction bus cycle, will terminate the
instruction in progress and return the device to standby mode. Instruction commands (Op Code),
addresses, and data are all input from the most significant bit (MSB) first.
Table 6: Device Operation Instructions for SST25WF080
Instruction
Description
Op Code Cycle1
1. One bus cycle is eight clock periods.
Address
Cycle(s)2
2. Address bits above the most significant bit of each density can be VIL or VIH.
Dummy
Cycle(s)
Data
Cycle(s)
Maximum
Frequency
Read
Read Memory
0000 0011b (03H)
3
0
1 to
∞
33 MHz
High-Speed
Read
Read Memory at Higher Speed
0000 1011b (0BH)
3
1
1 to
∞
75 MHz
4 KByte Sec-
tor-Erase3
3. 4 KByte Sector-Erase addresses: use AMS-A12, remaining addresses are don’t care but must be set either at VIL or VIH.
Erase 4 KByte of memory array
0010 0000b (20H)
3
0
0
32 KByte
Block-Erase4
4. 32 KByte Block-Erase addresses: use AMS-A15, remaining addresses are don’t care but must be set either at VIL or VIH.
Erase 32 KByte block
of memory array
0101 0010b (52H)
3
0
0
64 KByte
Block-Erase5
Erase 64 KByte block
of memory array
1101 1000b (D8H)
3
0
0
Chip-Erase
Erase Full Memory Array
0110 0000b (60H) or
1100 0111b (C7H)
00
0
Byte-Program To Program One Data Byte
0000 0010b (02H)
3
0
1
AAI-Word-
Program6
Auto Address Increment
Programming
1010 1101b (ADH)
3
0
2 to
∞
RDSR7
Read-Status-Register
0000 0101b (05H)
0
0
1 to
∞
EWSR8
Enable-Write-Status-Register
0110 0000b (50H)
0
0
0
WRSR
Write-Status-Register
0000 0001b (01H)
0
0
1
WREN8
Write-Enable
0000 0110b (06H)
0
0
0
WRDI
Write-Disable
0000 0100b (04H)
0
0
0
RDID9
Read-ID
1001 0000b (90H) or
1010 1011b (ABH)
30
1 to
∞
EBSY
Enable SO to output RY/BY#
status during AAI programming
0111 0000b (70H)
0
0
0
DBSY
Disable SO to output RY/BY#
status during AAI programming
1000 0000b (80H)
0
0
0
JEDEC-ID
JEDEC ID read
1001 1111b (9FH)
0
0
3 to
∞
EHLD
Enable HOLD# pin functionality
of the RST#/HOLD# pin
1010 1010b (AAH)
0
0
0
T6.0 25024



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