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SST25WF080 датащи(PDF) 11 Page - Microchip Technology |
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SST25WF080 датащи(HTML) 11 Page - Microchip Technology |
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11 / 33 page ![]() ©2012 Silicon Storage Technology, Inc. DS25024C 10/12 11 8 Mbit 1.8V SPI Serial Flash SST25WF080 Not Recommended for New Designs Instructions Instructions are used to read, write (Erase and Program), and configure the SST25WF080. The instruction bus cycles are 8 bits each for commands (Op Code), data, and addresses. The Write- Enable (WREN) instruction must be executed prior to Byte-Program, Auto Address Increment (AAI) programming, Sector-Erase, Block-Erase, Write-Status-Register, or Chip-Erase instructions. The com- plete instructions are provided in Table 6. All instructions are synchronized off a high-to-low transition of CE#. Inputs will be accepted on the rising edge of SCK starting with the most significant bit. CE# must be driven low before an instruction is entered and must be driven high after the last bit of the instruction has been shifted in (except for Read, Read-ID, and Read-Status-Register instructions). Any low-to-high transition on CE#, before receiving the last bit of an instruction bus cycle, will terminate the instruction in progress and return the device to standby mode. Instruction commands (Op Code), addresses, and data are all input from the most significant bit (MSB) first. Table 6: Device Operation Instructions for SST25WF080 Instruction Description Op Code Cycle1 1. One bus cycle is eight clock periods. Address Cycle(s)2 2. Address bits above the most significant bit of each density can be VIL or VIH. Dummy Cycle(s) Data Cycle(s) Maximum Frequency Read Read Memory 0000 0011b (03H) 3 0 1 to ∞ 33 MHz High-Speed Read Read Memory at Higher Speed 0000 1011b (0BH) 3 1 1 to ∞ 75 MHz 4 KByte Sec- tor-Erase3 3. 4 KByte Sector-Erase addresses: use AMS-A12, remaining addresses are don’t care but must be set either at VIL or VIH. Erase 4 KByte of memory array 0010 0000b (20H) 3 0 0 32 KByte Block-Erase4 4. 32 KByte Block-Erase addresses: use AMS-A15, remaining addresses are don’t care but must be set either at VIL or VIH. Erase 32 KByte block of memory array 0101 0010b (52H) 3 0 0 64 KByte Block-Erase5 Erase 64 KByte block of memory array 1101 1000b (D8H) 3 0 0 Chip-Erase Erase Full Memory Array 0110 0000b (60H) or 1100 0111b (C7H) 00 0 Byte-Program To Program One Data Byte 0000 0010b (02H) 3 0 1 AAI-Word- Program6 Auto Address Increment Programming 1010 1101b (ADH) 3 0 2 to ∞ RDSR7 Read-Status-Register 0000 0101b (05H) 0 0 1 to ∞ EWSR8 Enable-Write-Status-Register 0110 0000b (50H) 0 0 0 WRSR Write-Status-Register 0000 0001b (01H) 0 0 1 WREN8 Write-Enable 0000 0110b (06H) 0 0 0 WRDI Write-Disable 0000 0100b (04H) 0 0 0 RDID9 Read-ID 1001 0000b (90H) or 1010 1011b (ABH) 30 1 to ∞ EBSY Enable SO to output RY/BY# status during AAI programming 0111 0000b (70H) 0 0 0 DBSY Disable SO to output RY/BY# status during AAI programming 1000 0000b (80H) 0 0 0 JEDEC-ID JEDEC ID read 1001 1111b (9FH) 0 0 3 to ∞ EHLD Enable HOLD# pin functionality of the RST#/HOLD# pin 1010 1010b (AAH) 0 0 0 T6.0 25024 |
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