SST25WF080_12 datasheet(27/33 Pages) MICROCHIP

27 / 33 page

DS25024C

10/12

8 Mbit 1.8V SPI Serial Flash

SST25WF080

Not Recommended for New Designs

DC Characteristics

Table 12: DC Operating Characteristics

Symbol Parameter

Limits

Test Conditions

Min

Typ1

1. Value characterized, not fully tested in production.

Max

Units

IDDR

Read Current

CE#=0.1 VDD/0.9 VDD@33 MHz, SO=open

IDDR2

Read Current

CE#=0.1 VDD/0.9VDD@75 MHz, SO=open

IDDW

Program and Erase Current

CE#=VDD

ISB

Standby Current

µA

CE#=VDD, VIN=VDD or VSS

ILI

Input Leakage Current

µA

VIN=GND to VDD, VDD=VDD Max

ILO

Output Leakage Current

µA

VOUT=GND to VDD, VDD=VDD Max

VIL

Input Low Voltage

0.3

VDD=VDD Min

VIH

Input High Voltage

0.7 VDD

VVDD=VDD Max

VOL

Output Low Voltage

0.2

IOL=100 µA, VDD=VDD Min

VOH

Output High Voltage

VDD-0.2

IOH=-100 µA, VDD=VDD Min

T12.0 25024

Table 13: Capacitance (TA = 25°C, f=1 Mhz, other pins open)

Parameter

Description

Test Condition

Maximum

COUT1

1. This parameter is measured only for initial qualification and after a design or process change that could affect this

parameter.

Output Pin Capacitance

VOUT = 0V

12 pF

CIN1

Input Capacitance

VIN = 0V

6 pF

T13.0 25024

Table 14: Reliability Characteristics

Symbol

Parameter

Minimum Specification

Units

Test Method

NEND1

1. This parameter is measured only for initial qualification and after a design or process change that could affect this

parameter.

Endurance

10,000

Cycles

JEDEC Standard A117

TDR1

Data Retention

100

Years

JEDEC Standard A103

ILTH1

Latch Up

100 + IDD

JEDEC Standard 78

T14.0 25024

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