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DAC8420FS датащи(PDF) 4 Page - Analog Devices |
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DAC8420FS датащи(HTML) 4 Page - Analog Devices |
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4 / 16 page ![]() DAC8420 REV. 0 –4– WAFER TEST LIMITS DAC8420G Parameter Symbol Conditions Limit Units Integral Linearity INL ±1 LSB max Differential Linearity DNL ±1 LSB max Min-Scale Offset ±1 LSB max Max-Scale Offset ±1 LSB max Logic Input High Voltage VINH 2.4 V min Logic Input Low Voltage VINL 0.8 V max Logic Input Current IIN 1 µA max Positive Supply Current IDD 8 mA max Negative Supply Current ISS 7 mA max NOTE Electrical tests are performed at wafer probe to the limits shown. Due to variations in assembly methods and normal yield loss, yield after packaging is not guaranteed for standard product dice. Consult factory to negotiate specifications based on dice lot qualification through sample lot assembly and testing. ABSOLUTE MAXIMUM RATINGS (TA = +25°C unless otherwise noted) VDD to GND . . . . . . . . . . . . . . . . . . . . . . . . . –0.3 V, +18.0 V VSS to GND . . . . . . . . . . . . . . . . . . . . . . . . . . +0.3 V, –18.0 V VSS to VDD . . . . . . . . . . . . . . . . . . . . . . . . . . . –0.3 V, +36.0 V VSS to VVREFLO . . . . . . . . . . . . . . . . . . . . . . –0.3 V, VSS – 2.0 V VVREFHI to VVREFLO . . . . . . . . . . . . . . . . . . . +2.0 V, VDD – VSS VVREFHI to VDD . . . . . . . . . . . . . . . . . . . . . . . +2.0 V, +33.0 V IVREFHI, IVREFLO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10 mA Digital Input Voltage to GND . . . . . . . . . –0.3 V, VDD + 0.3 V Output Short Circuit Duration . . . . . . . . . . . . . . . . Indefinite Operating Temperature Range EP, FP, ES, FS, EQ, FQ . . . . . . . . . . . . . . –40 °C to +85°C Dice Junction Temperature . . . . . . . . . . . . . . . . . . . . . +150 °C Storage Temperature . . . . . . . . . . . . . . . . . . –65 °C to +150°C Power Dissipation . . . . . . . . . . . . . . . . . . . . . . . . . . 1000 mW Lead Temperature (Soldering, 60 sec) . . . . . . . . . . . . . +300 °C Thermal Resistance Package Type θ JA θ JC Units 16-Pin Plastic DIP (P) 70 1 27 °C/W 16-Pin Hermetic DIP (Q) 82 1 9 °C/W 16-Lead Small Outline Surface Mount (S) 86 2 22 °C/W NOTES 1 θ JA is specified for worst case mounting conditions, i.e., θJA is specified for device in socket. 2 θ JA is specified for device on board. CAUTION 1. Stresses above those listed under “Absolute Maximum Rat- ings” may cause permanent damage to the device. This is a stress rating only and functional operation at or above this specification is not implied. Exposure to the above maximum rating conditions for extended periods may affect device reliability. 2. Digital inputs and outputs are protected, however, permanent damage may occur on unprotected units from high-energy electrostatic fields. Keep units in conductive foam or packaging at all times until ready to use. Use proper antistatic handling procedures. 3. Remove power before inserting or removing units from their sockets. 4. Analog Outputs are protected from short circuits to ground or either supply. DICE CHARACTERISTICS 10 SDI 9 GND 8 VSS 7 VOUTA CLR 15 CLSEL 16 (SUBSTRATE) VDD 1 VOUTD 2 VOUTC 3 VREFLO 4 VREFHI 5 VOUTB 6 11 CLK 12 CS 14 LD 13 NC NC = NO CONNECT Die Size 0.119 × 0.283 inch, 33,677 sq. mils (3.023 × 7.188 mm, 21.73 sq. mm) Transistor Count 2,207 For additional DICE ordering information, refer to databook. (at VDD = +15.0 V, VSS = –15.0 V, VREFHI = +10.0 V, VREFLO = –10.0 V, TA = +25 C unless otherwise noted) |
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