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поискавой системы для электроныых деталей |
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поискавой системы для электроныых деталей |
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TNETX3100PGC датащи(PDF) 65 Page - Texas Instruments |
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TNETX3100PGC датащи(HTML) 65 Page - Texas Instruments |
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65 / 80 page  TNETX3100 ThunderSWITCH™ 10-PORT 10-/100-MBIT/S ETHERNET™ SWITCH SPWS031D – JUNE 1997 – REVISED OCTOBER 1997 65 POST OFFICE BOX 655303 • DALLAS, TEXAS 75265 timing requirements (see Figure 17) DRAM burst write cycle (TNETX3100 frame buffer write) NO. MIN NOM MAX UNIT 1 tc(OSCIN) Cycle time, OSCIN clock 20 ns 2 tw(OSCINH) Pulse duration, OSCIN high 8 ns 3 tw(OSCINL) Pulse duration, OSCIN low 8 ns Frequency drift, OSCIN clock ±50 ppm operating characteristics over recommended operating conditions (see Figure 17) DRAM burst write cycle (TNETX3100 frame buffer write) (with DREF clock) NO. PARAMETER MIN TYP MAX UNIT 4 tc(DREF) Cycle time, DREF clock 20 ns 5 td(DA)† Delay time, from DREF ↑ to DA7–DA0 valid/invalid 0 ns 5 td(DX)† Delay time, from DREF ↑ to DX2–DX0 valid/invalid 0 ns 6 td(DRAS)† Delay time, from DREF ↑ to DRAS transition 0 ns 7 td(DD)† Delay time, from DREF ↑ to DD35–DD0 valid/invalid 0 ns 8 td(DOE)† Delay time, from DREF ↑ to DOE transition 0 ns 9 td(DWE)† Delay time, from DREF ↑ to DWE transition 0 ns 10 td(DCAS)† Delay time, from DREF ↑ to DCAS transition 0 ns † All DRAM terminals are specified to have less than a 7-ns variance at any temperature and voltage. operating characteristics over recommended operating conditions (see Figure 17) DRAM burst write cycle (TNETX3100 frame buffer write) (with OSCIN clock) NO. PARAMETER MIN MAX UNIT 11 td(DA) Delay time, from OSCIN ↑ to DA7–DA0 valid/invalid 3 18 ns 11 td(DX) Delay time, from OSCIN ↑ to DX2–DX0 valid/invalid 3 18 ns 12 td(DRAS) Delay time, from OSCIN ↑ to DRAS transition 3 16 ns 13 td(DD) Delay time, from OSCIN ↑ to DD35–DD0 valid/invalid 3 18 ns 14 td(DOE) Delay time, from OSCIN ↑ to DOE transition 3 18 ns 15 td(DWE) Delay time, from OSCIN ↑ to DWE transition 3 16 ns 16 td(DCAS) Delay time, from OSCIN ↑ to DCAS transition 3 15 ns |
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