Data Sheet

19

Rev. 1.2, 2007-11-13

TLE7269G

General Product Characteristics

5

General Product Characteristics

5.1

Absolute Maximum Ratings

Note: Stresses above the ones listed here may cause permanent damage to the device. Exposure to absolute

maximum rating conditions for extended periods may affect device reliability.

Note: Integrated protection functions are designed to prevent IC destruction under fault conditions described in the

data sheet. Fault conditions are considered as “outside” normal operating range. Protection functions are

not designed for continuous repetitive operation.

Table 4

All voltages with respect to ground; positive current flowing into pin;

(unless otherwise specified)

1) Not subject to production test, specified by design

Pos.

Parameter

Symbol

Limit Values

Unit

Remarks

Min.

Max.

Voltages

5.1.1

Battery supply voltage

V

S

-0.3

40

V

LIN Spec 2.1 Param. 10

5.1.2

Logic supply voltage

-0.3

5.5

V

–

5.1.3

Bus and WK input voltage

versus GND

-40

-40

40

40

V

V

–

5.1.4

Logic voltages at EN, W2O,

TxD1, TxD2, RxD1, RxD2

-0.3

5.5

V

–

5.1.5

INH1, INH2 voltage

versus GND

-0.3

-40

40

0.3

V

V

–

Currents

5.1.6

Output current at INH1,

INH2

-150

80

mA

2)

2) Output current is internally limited to -150 mA

Temperatures

5.1.7

Junction temperature

-40

150

°C–

5.1.8

Storage temperature

-55

150

°C–

ESD Resistivity

5.1.9

Electrostatic discharge

WK versus GND

-6

6

kV

Human Body Model

(100pF via 1.5 k

3) ESD susceptibility HBM according to EIA / JESD 22-A 114

5.1.10 Electrostatic discharge

voltage W2O versus

V

S

-1

1

kV

Human Body Model

(100pF via 1.5 k

Ω)3)

5.1.11 Electrostatic discharge

voltage all pins except W2O

versus

V

S

-2

2

kV

Human Body Model

(100pF via 1.5 k

Ω)3)