TDF8591TH_1

© NXP B.V. 2008. All rights reserved.

Product data sheet

Rev. 01 — 5 March 2008

11 of 34

NXP Semiconductors

TDF8591TH

2

× 100 W SE (4 Ω) or 1 × 310 W BTL (4 Ω) class-D amplifier

[1]

device.

[2]

device.

[3]

Pin DIAG should not be connected to a voltage source or to a pull-up resistor. An example of a circuit that can be used to read out

diagnostic data is given in Figure 7.

8.

Thermal characteristics

9.

Static characteristics

voltage on pin MODE

referred to SGND2

0

8

V

voltage on pin OSC

040

V

voltage on pin IN1M

referred to SGND1

−5+5

V

voltage on pin IN1P

referred to SGND1

−5+5

V

voltage on pin IN2M

referred to SGND2

−5+5

V

voltage on pin IN2P

referred to SGND2

−5+5

V

voltage on pin DIAG

[3] 09

V

output voltage

Table 5.

In accordance with the Absolute Maximum Rating System (IEC 60134).

Symbol Parameter

Conditions

Min

Max

Unit

Table 6.

Thermal characteristics

Symbol

Parameter

Conditions

Typ

Unit

thermal resistance from junction to case

1

K/W

thermal resistance from junction to ambient

In free air

35

K/W

Table 7.

Static characteristics

Symbol

Parameter

Conditions

Min

Typ

Max

Unit

Supply

supply voltage

[1]

±14

±27

±29

V

total quiescent current

no load, no filter, no snubber

network connected

-

5065mA

standby current

-

150

500

µA

Mode select input; pin MODE (reference to SGND2)

current on pin MODE

-

100

300

µA

voltage on pin MODE

Standby mode

[2][3] 0

-

0.8

V

Mute mode

[2][3] 2.2

-

2.8

V

Operating mode

[2][3] 4.2

-

6

V

LOW-level output voltage

activated OCP or WP

[4] -

-

0.8

V

HIGH-level output voltage

no activated OCP or WP

[4] -

8.4

9

V

Audio inputs; pins IN1M, IN1P (reference to SGND1), IN2P and IN2M (reference to SGND2)

input voltage

[2] -0

-

V