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TDF8591TH датащи(PDF) 10 Page - NXP Semiconductors

номер детали TDF8591TH
подробное описание детали  2 X 100 W SE (4 OHM) or 1 X 310 W BTL (4 OHM) class-D amplifier
PDF  34 Pages
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производитель  NXP [NXP Semiconductors]
домашняя страница  http://www.nxp.com
Logo NXP - NXP Semiconductors

TDF8591TH датащи(HTML) 10 Page - NXP Semiconductors

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TDF8591TH_1
© NXP B.V. 2008. All rights reserved.
Product data sheet
Rev. 01 — 5 March 2008
10 of 34
NXP Semiconductors
TDF8591TH
2
× 100 W SE (4 Ω) or 1 × 310 W BTL (4 Ω) class-D amplifier
7.
Limiting values
Input resistors are referred to SGND.
a. Internal circuitry
b. External connections
Fig 8.
Input configuration for mono BTL application
001aad841
IN1P
SGND
IN1M
IN2P
IN2M
Vin
IN1P
OUT1
power stage
mbl466
OUT2
SGND
IN1M
IN2P
IN2M
Table 5.
Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol Parameter
Conditions
Min
Max
Unit
VDD
supply voltage
VDDP1 and VDDA1 referred to
SGND1; VDDP2 and VDDA2 referred
to SGND2
−0.3
+34
V
VSS
negative supply voltage
VSSP1 and VSSA1 referred to
SGND1; VSSP2 and VSSA2 referred
to SGND2
−34
+0.3
V
VP
supply voltage
−0.3
+66
V
IOSM
non-repetitive peak output current
-
12
A
Tstg
storage temperature
−55
+150
°C
Tamb
ambient temperature
−40
+85
°C
Tj
junction temperature
−40
+150
°C
VBOOT1
voltage on pin BOOT1
referred to OUT1
[1] 014
V
VBOOT2
voltage on pin BOOT2
referred to OUT2
[1] 014
V
VSTABI
voltage on pin STABI
referred to VSSD
[2] -14
V



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