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TDF8591TH датащи(PDF) 24 Page - NXP Semiconductors

номер детали TDF8591TH
подробное описание детали  2 X 100 W SE (4 OHM) or 1 X 310 W BTL (4 OHM) class-D amplifier
PDF  34 Pages
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производитель  NXP [NXP Semiconductors]
домашняя страница  http://www.nxp.com
Logo NXP - NXP Semiconductors

TDF8591TH датащи(HTML) 24 Page - NXP Semiconductors

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TDF8591TH_1
© NXP B.V. 2008. All rights reserved.
Product data sheet
Rev. 01 — 5 March 2008
24 of 34
NXP Semiconductors
TDF8591TH
2
× 100 W SE (4 Ω) or 1 × 310 W BTL (4 Ω) class-D amplifier
RL =4 Ω.
(1) VP = ±29 V.
(2) VP = ±27 V.
(3) VP = ±14 V.
RL =4 Ω.
(1) VP = ±27 V.
(2) VP = ±29 V.
(3) VP = ±14 V.
a. Channel 2 to channel 1.b. Channel 1 to channel 2.
Fig 20. Channel separation as a function of frequency, SE application
001aah206
40
60
20
80
100
αcs
(dB)
0
(2)
(3)
(1)
f (kHz)
10−2
102
10
10−1
1
001aah207
40
60
20
80
100
αcs
(dB)
0
(1)
(2)
(3)
f (kHz)
10−2
102
10
10−1
1
(1) VP = ±29 V.
(2) VP = ±27 V.
(3) VP = ±14 V.
(1) VP = ±14 V.
(2) VP = ±29 V.
(3) VP = ±27 V.
a. Channel 1.b. Channel 2.
Fig 21. Common mode rejection ratio as a function of frequency, SE application
001aah208
60
100
CMRR
(dB)
20
(2)
(1)
f (kHz)
10−2
102
10
10−1
1
001aah209
60
100
CMRR
(dB)
20
(2)
(1)
(3)
f (kHz)
10−2
102
10
10−1
1



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