 |
поискавой системы для электроныых деталей |
|
|
поискавой системы для электроныых деталей |
|
TDF8591TH датащи(PDF) 30 Page - NXP Semiconductors |
|
|
|||||||||||||||||||||||||||||
TDF8591TH датащи(HTML) 30 Page - NXP Semiconductors |
|
|
30 / 34 page  TDF8591TH_1 © NXP B.V. 2008. All rights reserved. Product data sheet Rev. 01 — 5 March 2008 30 of 34 NXP Semiconductors TDF8591TH 2 × 100 W SE (4 Ω) or 1 × 310 W BTL (4 Ω) class-D amplifier 13. Test information 13.1 Quality information This product has been qualified in accordance with the Automotive Electronics Council (AEC) standard Q100 - Stress test qualification for integrated circuits, and is suitable for use in automotive applications. a. RL =2 Ω; VP = ±28 V. b. RL =4 Ω; VP = ±29 V Fig 32. Power dissipation as a function of output power (one channel), SE application Po (W) 0 200 160 80 120 40 001aah228 20 10 30 40 P (W) 0 Po (W) 0 100 80 40 60 20 001aah229 4 8 12 P (W) 0 a. RL =4 Ω; VP = ±18 V. b. RL =4 Ω; VP = ±27 V Fig 33. Power dissipation as a function of output power, BTL application Po (W) 0 160 120 40 80 001aah230 8 4 12 16 P (W) 0 Po (W) 0 160 120 40 80 001aah231 8 12 4 16 20 P (W) 0 |
|
ссылки URL |
| Вашему бизинису помогли Аллдатащит? [ DONATE ] |
Что такое Аллдатащит | реклама | контакт | Конфиденциальность | Ссылка на техническое описание | обмен ссыками | поиск по производителю All Rights Reserved©Alldatasheet.com |
| Russian : Alldatasheetru.com | Korean : Alldatasheet.co.kr | Spanish : Alldatasheet.es | French : Alldatasheet.fr | Italian : Alldatasheetit.com Portuguese : Alldatasheetpt.com | Polish : Alldatasheet.pl | Vietnamese : Alldatasheet.vn Indian : Alldatasheet.in | Mexican : Alldatasheet.com.mx | British : Alldatasheet.co.uk | New Zealand : Alldatasheet.co.nz |
|
Family Site : ic2ic.com |
icmetro.com |
Russian ▼
English
Chinese
German
Japanese
Russian
Korean
Spanish
French
Italian
Portuguese
Polish
Vietnamese
Indian
Mexican
British
New Zealand
