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поискавой системы для электроныых деталей |
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поискавой системы для электроныых деталей |
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TDF8591TH датащи(PDF) 25 Page - NXP Semiconductors |
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TDF8591TH датащи(HTML) 25 Page - NXP Semiconductors |
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25 / 34 page  TDF8591TH_1 © NXP B.V. 2008. All rights reserved. Product data sheet Rev. 01 — 5 March 2008 25 of 34 NXP Semiconductors TDF8591TH 2 × 100 W SE (4 Ω) or 1 × 310 W BTL (4 Ω) class-D amplifier (1) VP = ±14 V. (2) VP = ±27 V and ±29 V. Fig 22. Common mode rejection ratio as a function of frequency; BTL application 001aah210 60 100 CMRR (dB) 20 (2) (1) f (kHz) 10−2 102 10 10−1 1 (1) ripple in antiphase. (2) ripple on VDD only. (3) ripple on VSS only. (4) ripple in phase. (1) ripple on VSS only. (2) ripple on VDD only. (3) ripple in phase. (4) ripple in antiphase. a. SE application; RL =4 Ω b. BTL application; RL =8 Ω Fig 23. Supply voltage ripple rejection as a function of frequency; Standby mode 001aah211 80 100 120 SVRR (dB) 60 (2) (4) (1) (3) f (kHz) 10−2 102 10 10−1 1 001aah212 80 100 120 SVRR (dB) 60 (2) (4) (1) (3) f (kHz) 10−2 102 10 10−1 1 |
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