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P89LPC9321 датащи(PDF) 52 Page - NXP Semiconductors

номер детали P89LPC9321
подробное описание детали  8-bit microcontroller with accelerated two-clock 80C51 core 8 kB 3 V byte-erasable flash with 512-byte data EEPROM
PDF  70 Pages
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производитель  NXP [NXP Semiconductors]
домашняя страница  http://www.nxp.com
Logo NXP - NXP Semiconductors

P89LPC9321 датащи(HTML) 52 Page - NXP Semiconductors

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P89LPC9321_1
© NXP B.V. 2008. All rights reserved.
Product data sheet
Rev. 01 — 9 December 2008
52 of 70
NXP Semiconductors
P89LPC9321
8-bit microcontroller with accelerated two-clock 80C51 core
[1]
Typical ratings are not guaranteed. The values listed are at room temperature, 3 V.
[2]
The IDD(oper),IDD(idle), and IDD(pd) specifications are measured using an external clock with the following functions disabled: comparators,
real-time clock, and watchdog timer.
[3]
The IDD(tpd) specification is measured using an external clock with the following functions disabled: comparators, real-time clock,
brownout detect, and watchdog timer.
[4]
See Section 8 “Limiting values” for steady state (non-transient) limits on IOL or IOH. If IOL/IOH exceeds the test condition, VOL/VOH may
exceed the related specification.
IIL
LOW-level input current
VI = 0.4 V
[7] --
−80
µA
ILI
input leakage current
VI =VIL, VIH, or Vth(HL)
[8] --
±1
µA
ITHL
HIGH-LOW transition current
all ports; VI = 1.5 V at
VDD = 3.6 V
[9]
−30
-
−450
µA
RRST_N(int) internal pull-up resistance on
pin RST
pin RST
10
-
30
k
BOD interrupt
Vtrip
trip voltage
falling stage
BOICFG1,
BOICFG0 = 01
2.25
-
2.55
V
BOICFG1,
BOICFG0 = 10
2.60
-
2.80
V
BOICFG1,
BOICFG0 = 11
3.10
-
3.40
V
rising stage
BOICFG1,
BOICFG0 = 01
2.30
-
2.60
V
BOICFG1,
BOICFG0 = 10
2.70
-
2.90
V
BOICFG1,
BOICFG0 = 11
3.15
-
3.45
V
BOD reset
Vtrip
trip voltage
falling stage
BOE1, BOE0 = 01
2.10
-
2.30
V
BOE1, BOE0 = 10
2.25
-
2.55
V
BOE1, BOE0 = 11
2.80
-
3.20
V
rising stage
BOE1, BOE0 = 01
2.20
-
2.40
V
BOE1, BOE0 = 10
2.30
-
2.60
V
BOE1, BOE0 = 11
2.90
-
3.30
V
BOD EEPROM/FLASH
Vtrip
trip voltage
falling stage
2.25
-
2.55
V
rising stage
2.30
-
2.60
V
Vref(bg)
band gap reference voltage
1.11
1.23
1.34
V
TCbg
band gap temperature
coefficient
-
10
20
ppm/
°C
Table 10.
Static characteristics …continued
VDD = 2.4 V to 3.6 V unless otherwise specified.
Tamb = −40 °C to +85 °C for industrial applications, unless otherwise specified.
Symbol
Parameter
Conditions
Min
Typ[1]
Max
Unit



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