SC417/SC427

4

LX to PGND (V). . . . . . . . . . . . . . . . . . . . . . . . . . . . . -0.3 to +30

LX to PGND (V) (transient — 100ns) . . . . . . . . . . . -2 to +30

VIN to PGND (V). . . . . . . . . . . . . . . . . . . . . . . . . . . . -0.3 to +30

EN/PSV, PGOOD, ILIM, to GND (V) . . . . . . -0.3 to +(V5V + 0.3)

VOUT, VLDO, FB, FBL, to GND (V). . . . . . . -0.3to+(V5V+0.3)

V5V to PGND (V) . . . . . . . . . . . . . . . . . . . . . . . . . . . . -0.3 to +6

TON to PGND (V). . . . . . . . . . . . . . . . . . . . . -0.3 to +(V5V - 1.5)

ENL (V) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . -0.3 to V

IN

BST to LX (V) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . -0.3 to +6.0

BST to PGND (V) . . . . . . . . . . . . . . . . . . . . . . . . . . . -0.3 to +35

AGND to PGND (V) . . . . . . . . . . . . . . . . . . . . . . . . . -0.3 to +0.3

Recommended Operating Conditions

Input Voltage (V) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3.0 to 28

V5V to PGND (V) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4.5 to 5.5

VOUT to PGND (V) . . . . . . . . . . . . . . . . . . . . . . . . . . . 0.5 to 5.5

Thermal Information

Storage Temperature (°C). . . . . . . . . . . . . . . . . . . . -60 to +150

Maximum Junction Temperature (°C) . . . . . . . . . . . . . . . 150

Operating Junction Temperature (°C) . . . . . . -40 to +125

High-side MOSFET . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 25

Low-side MOSFET . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 20

PWM controller and LDO thermal resistance . . . . . 50

Peak IR Reflow Temperature (°C) . . . . . . . . . . . . . . . . . . . . 260

Exceeding the above specifications may result in permanent damage to the device or device malfunction. Operation outside of the parameters

specified in the Electrical Characteristics section is not recommended.

NOTES:

(1)

This device is ESD sensitive. Use of standard ESD handling precautions is required.

(2) Calculated from package in still air, mounted to 3 x 4.5 (in), 4 layer FR4 PCB with thermal vias under the exposed pad per JESD51 standards.

Unless specified: V

IN

=12V, T

A

= +25°C for Typ, -40 to +85 °C for Min and Max, T

J

< 125°C, V5V = +5V, Typical Application Circuit

Electrical Characteristics

Parameter

Conditions

Min

Typ

Max

Units

Input Supplies

Input Supply Voltage

328

V

V5V Voltage

4.5

5.5

V

Sensed at ENL pin, rising edge

2.40

2.60

2.95

V

Sensed at ENL pin, falling edge

2.235

2.40

2.565

VIN UVLO Hysteresis

EN/PSV = High

0.2

V

V5V UVLO Threshold

Measured at V5V pin, rising edge

3.7

3.9

4.1

V

Measured at V5V pin, falling edge

3.5

3.6

3.75

V5V UVLO Hysteresis

0.3

V

VIN Supply Current

ENL , EN/PSV = 0V, V

IN

= 28V

8.5

20

μA

Standby mode; ENL=V5V, EN/PSV = 0V

130