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M7020R датащи(PDF) 142 Page - STMicroelectronics |
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M7020R датащи(HTML) 142 Page - STMicroelectronics |
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142 / 150 page ![]() M7020R 142/150 SRAM WRITE with Table(s) of Up to 31 Devices The following explains the SRAM WRITE opera- tion done through a table(s) of up to 31 devices with the following parameters (TLSZ = 10). The di- agram of such table(s) is shown in Figure 104, page 143. The following assumes that SRAM ac- cess is done through M7020R Device 0 – Device 0 is the selected device. Figure 105, page 144 and Figure 106, page 145 show the timing diagram for Device 0 and Device 30, respectively. – Cycle 1A: The host ASIC applies the WRITE In- struction on CMD[1:0] using CMDV = 1. The DQ Bus supplies the address with DQ[20:19] set to '10' to select the SRAM address. The host ASIC selects the device for which the ID[4:0] matches the DQ[25:21] lines. The host ASIC also sup- plies SADR[21:20] on CMD[8:7] in this cycle. Note: CMD[2] must be set to '0' for SRAM WRITE because Burst WRITEs into the SRAM are not supported. – Cycle 1B: The host ASIC continues to apply the WRITE Instruction on CMD[1:0] using CMDV = 1. The DQ Bus supplies the address with DQ[20:19] set to '10' to select the SRAM ad- dress. Note: CMD[2] must be set to '0' for SRAM WRITE because Burst WRITEs into the SRAM are not supported. – Cycle 2: The host ASIC continues to drive DQ[67:0]. The data in this cycle is not used by the M7020R device. – Cycle 3: The host ASIC continues to drive DQ[67:0]. The data in this cycle is not used by the M7020R device. At the end of Cycle 3, a new command can begin. The WRITE is a pipelined operation. The WRITE Cycle appears at the SRAM Bus, however, with the same latency as that of a SEARCH Instruction, as measured from the second cycle of the WRITE command |
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