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SPC560D30L3 датащи(PDF) 47 Page - STMicroelectronics |
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SPC560D30L3 датащи(HTML) 47 Page - STMicroelectronics |
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47 / 82 page ![]() DS6494 Rev 8 47/82 SPC560D30x, SPC560D40x Electrical characteristics 77 ECC circuitry provides correction of single bit faults and is used to improve further automotive reliability results. Some units will experience single bit corrections throughout the life of the product with no impact to product reliability. 4.11.2 Flash power supply DC characteristics Table 31 shows the power supply DC characteristics on external supply. Note: Power supply for data flash is actually provided by code flash; this means that data flash cannot work if code flash is not powered. 1. Ambient temperature averaged over application duration. It is recommended not to exceed the product operating temperature range. Table 30. Flash memory read access timing Symbol C Parameter Conditions(1) Max Unit fCFREAD CC P Maximum working frequency for reading code flash memory at given number of wait states in worst conditions 2 wait states 48 MHz C 0 wait states 20 fDFREAD CC P Maximum working frequency for reading data flash memory at given number of wait states in worst conditions 6 wait states 48 MHz 1. VDD = 3.3 V ± 10% / 5.0 V ± 10%, TA = 40 to 125 °C, unless otherwise specified. Table 31. Flash power supply DC electrical characteristics Symbol C Parameter Conditions(1) Value Unit Min Typ Max ICFREAD CC D Sum of the current consumption on VDDHV and VDDBV on read access Flash module read fCPU = 48 MHz Code flash — — 33 mA IDFREAD CC D Data flash — — 4 mA ICFMOD CC D Sum of the current consumption on VDDHV and VDDBV on matrix modification (program/erase) Program/Erase on-going while reading flash registers, fCPU = 48 MHz Code flash — — 33 mA IDFMOD CC D Data flash — — 6 mA IFLPW CC D Sum of the current consumption on VDDHV and VDDBV during flash low-power mode — Code flash — — 910 µA ICFPWD CC D Sum of the current consumption on VDDHV and VDDBV during flash power-down mode — Code flash — — 125 µA IDFPWD CC D Data flash — — 25 µA 1. VDD = 3.3 V ± 10% / 5.0 V ± 10%, TA = 40 to 125 °C, unless otherwise specified. |
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