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CSD87331Q3D

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SLPS283B – SEPTEMBER 2011 – REVISED FEBRUARY 2017

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Copyright © 2011–2017, Texas Instruments Incorporated

(1)

Stresses beyond those listed under Absolute Maximum Ratings may cause permanent damage to the device. These are stress ratings

only, and functional operation of the device at these or any other conditions beyond those indicated in the Recommended Operating

Conditions is not implied. Exposure to absolute-maximum-rated conditions for extended periods may affect device reliability.

(2)

Pulse duration

≤ 50 µs, Duty cycle ≤ 0.01%.

5 Specifications

5.1 Absolute Maximum Ratings

TA = 25°C (unless otherwise noted)

(1)

PARAMETER

CONDITIONS

MIN

MAX

UNIT

Voltage

VIN to PGND

30

V

VSW to PGND

30

VSW to PGND (10 ns)

32

TG to TGR

–8

10

BG to PGND

–8

10

Pulsed current rating, IDM

(2)

45

A

Power dissipation, PD

6

W

Avalanche energy, EAS

Sync FET, ID = 42 A, L = 0.1 mH

88

mJ

Control FET, ID = 24 A, L = 0.1 mH

29

Operating junction, TJ

–55

150

°C

Storage temperature, TSTG

–55

150

°C

5.2 Recommended Operating Conditions

TA = 25°C (unless otherwise noted)

PARAMETER

CONDITIONS

MIN

MAX

UNIT

Gate drive voltage, VGS

4.5

8

V

Input supply voltage, VIN

27

V

Switching frequency, ƒSW

CBST = 0.1 µF (min)

1500

kHz

Operating current

15

A

Operating temperature, TJ

125

°C

(1)

Measurement made with six 10-µF (TDK C3216X5R1C106KT or equivalent) ceramic capacitors placed across VIN to PGND pins and

using a high current 5-V driver IC.

5.3 Power Block Performance

(1)

TA = 25°C (unless otherwise noted)

PARAMETER

CONDITIONS

MIN

TYP

MAX

UNIT

Power loss, PLOSS

(1)

VIN = 12 V, VGS = 5 V, VOUT = 1.3 V,

IOUT = 10 A, ƒSW = 500 kHz,

LOUT = 1 µH, TJ = 25°C

1.3

W

VIN quiescent current, IQVIN

TG to TGR = 0 V BG to PGND = 0 V

10

µA

(1)

RθJC is determined with the device mounted on a 1-in

2 (6.45-cm2), 2-oz (0.071-mm) thick Cu pad on a 1.5-in × 1.5-in

(3.81-cm × 3.81-cm), 0.06-in (1.52-mm) thick FR4 board. RθJC is specified by design while RθJA is determined by the user’s board

design.

(2)

Device mounted on FR4 material with 1-in2 (6.45-cm2) Cu.

5.4 Thermal Information

TA = 25°C (unless otherwise stated)

THERMAL METRIC

MIN

TYP

MAX

UNIT

RθJA

Junction-to-ambient thermal resistance (min Cu)(1)

149

°C/W

Junction-to-ambient thermal resistance (max Cu)(1)(2)

80

RθJC

Junction-to-case thermal resistance (top of package)(1)

36

°C/W

Junction-to-case thermal resistance (PGND pin)

(1)

3.1