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L99UDL01 датащи(PDF) 39 Page - STMicroelectronics |
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L99UDL01 датащи(HTML) 39 Page - STMicroelectronics |
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39 / 88 page ![]() DS12511 Rev 5 39/88 L99UDL01 Electrical characteristics 87 4.3.11 SPI timing Table 16. SPI timing parameters Electrical characteristics (-40°C < TJ < 130°C, 6V < VS < 18V unless otherwise specified) SPI Timing Parameters Req ID Symbol Parameter Test Condition Min. Typ. Max. Unit B.018 tCLK CLK period 250 ns B.019 tCLKH Minimum CLK high time 100 ns B.020 tCLKL Minimum CLK low time 100 ns B.021 tset CSN CSN setup time, CSN low before CLK rising Active device in Normal Mode, not in STBY 150 ns B.022 twake_up Minimum CSN low pulse timing needed before the first SPI access Wake up from Standby to Normal mode 150 µs B.023 tset CLK CLK setup time before CSN rising 150 ns B.024 tSDI(set) SDI setup time before CLK rising 25 ns B.025 tSDI(hold) SDI hold time 25 ns B.026 tSDO(rise) Rise time of SDO CL=50 pF; guaranteed by design 25 ns B.027 tSDO(fall) Fall time of SDO CL=50 pF; guaranteed by design 25 ns B.028 ten DO tri H CSN falling until SDO high CL = 50 pF, SDO=HZ t1”: ILOAD=-1 mA; Pull-down load to GND; Active device in Normal Mode 50 100 ns B.029 ten DO tri L CSN falling until SDO low SDO=HZ t0”: ILOAD=1 mA; Pull-up load to VCC; Active device in Normal Mode 50 100 ns B.030 tSDO(wake) CSN falling until SDO valid CL = 50 pF, ILOAD=-1 mA Pull-down load to GND 0.15 1 ms B.031 tdis DO H tri CSN rising until SDO from high to tristate CL = 50 pF, ILOAD=-4 mA Pull-down load to GND Active device in Normal Mode 50 100 ns B.032 tdis DO L tri CSN rising until SDO from low to tristate CL = 50 pF, ILOAD=4 mA Pull-up load to VDD Active device in Normal Mode 50 100 ns |
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