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STA333W датащи(PDF) 12 Page - STMicroelectronics |
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STA333W датащи(HTML) 12 Page - STMicroelectronics |
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12 / 50 page ![]() Electrical specification STA333W 12/50 DocID13365 Rev 3 3.3 Electrical specifications - digital section 3.4 Electrical specifications - power section The specifications in Table 7 below are given for the conditions VCC = 18 V, VDD = 3.3 V, fSW = 384 kHz, Tamb = 25 °C and RL = 8 , unless otherwise specified. Table 6. Electrical characteristics for digital section Symbol Parameter Conditions Min Typ Max Unit Iil Input current, no pull-up or pull-down resistor Vi = 0 V - - ±10 µA Iih Vi = VDD = 3.6 V - - ±10 µA Vil Low-level input voltage - - - 0.2 * VDD V Vih High-level input voltage - 0.8 * VDD --V Vol Low-level output voltage Iol = 2 mA - - 0.4 * VDD V Voh High-level output voltage Ioh = 2 mA 0.8 * VDD --V Ipu Pull-up current - 25 66 125 µA Rpu Equivalent pull-up resistance -- 50 - k Table 7. Electrical specifications for power section Symbol Parameter Conditions Min Typ Max Unit Po Output power BTL THD = 1% - 16 - W THD = 10% - 20 - RdsON Power P- channel/N-channel MOSFET (total bridge) ld = 1 A - 180 250 m ldss Power P- channel/N-channel leakage VCC = 18 V - - 10 A gP Power P-channel RdsON matching ld = 1 A 95 --% gN Power N-channel RdsON matching ld = 1 A 95 --% ILDT Low-current dead time (static) Resistive load, refer to Figure 5 -5 10 ns IHDT High-current dead time (dynamic) Refer to Figure 6 - 1020ns tr Rise time Resistive load, refer to Figure 5 -8 10 ns |
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