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STA333W датащи(PDF) 12 Page - STMicroelectronics

номер детали STA333W
подробное описание детали  2 channel high-efficiency digital audio system Sound Terminal
PDF  50 Pages
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производитель  STMICROELECTRONICS [STMicroelectronics]
домашняя страница  http://www.st.com
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STA333W датащи(HTML) 12 Page - STMicroelectronics

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Electrical specification
STA333W
12/50
DocID13365 Rev 3
3.3
Electrical specifications - digital section
3.4
Electrical specifications - power section
The specifications in Table 7 below are given for the conditions VCC = 18 V, VDD = 3.3 V,
fSW = 384 kHz, Tamb = 25 °C and RL = 8 , unless otherwise specified.
Table 6. Electrical characteristics for digital section
Symbol
Parameter
Conditions
Min
Typ
Max
Unit
Iil
Input current, no pull-up or
pull-down resistor
Vi = 0 V
-
-
±10
µA
Iih
Vi = VDD = 3.6 V
-
-
±10
µA
Vil
Low-level input voltage
-
-
-
0.2 *
VDD
V
Vih
High-level input voltage
-
0.8 *
VDD
--V
Vol
Low-level output voltage
Iol = 2 mA
-
-
0.4 *
VDD
V
Voh
High-level output voltage
Ioh = 2 mA
0.8 *
VDD
--V
Ipu
Pull-up current
-
25
66
125
µA
Rpu
Equivalent pull-up
resistance
--
50
-
k
Table 7. Electrical specifications for power section
Symbol
Parameter
Conditions
Min
Typ
Max
Unit
Po
Output power BTL
THD = 1%
-
16
-
W
THD = 10%
-
20
-
RdsON
Power P-
channel/N-channel
MOSFET (total bridge)
ld = 1 A
-
180
250
m
ldss
Power P-
channel/N-channel leakage
VCC = 18 V
-
-
10
A
gP
Power P-channel RdsON
matching
ld = 1 A
95
--%
gN
Power N-channel RdsON
matching
ld = 1 A
95
--%
ILDT
Low-current dead time
(static)
Resistive load,
refer to Figure 5
-5
10
ns
IHDT
High-current dead time
(dynamic)
Refer to Figure 6
-
1020ns
tr
Rise time
Resistive load,
refer to Figure 5
-8
10
ns



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