5

LM2743

www.ti.com

SNVS276I – APRIL 2004 – REVISED FEBRUARY 2019

Product Folder Links: LM2743

Submit Documentation Feedback

Copyright © 2004–2019, Texas Instruments Incorporated

(1)

The power MOSFETs can run on a separate 1-V to 16-V rail (Input voltage, VIN). Practical lower limit of VIN depends on selection of the

external MOSFET.

6.5 Electrical Characteristics

Typical limits are for TJ = 25°C only, represent the most likely parametric norm at TJ = 25°C, and are provided for reference

purposes only; minimum and maximum limits apply over the junction temperature range of –40°C to 125°C. Unless otherwise

specified, VCC = 3.3 V. Data sheet minimum and maximum specification limits are specified by design, test, or statistical

analysis. (See

(1))

PARAMETER

TEST CONDITIONS

MIN

TYP

MAX

UNIT

VFB

FB Pin Voltage

VCC = 3 V to 6 V

0.588

0.6

0.612

V

VON

UVLO Thresholds

Rising

Falling

2.76

2.42

V

IQ_VCC

Operating VCC Current

VCC = 3.3 V, VSD = 3.3 V

Fsw = 600 kHz

1

1.5

2.1

mA

VCC = 5V, VSD = 3.3 V

Fsw = 600 kHz

1

1.7

2.1

Shutdown VCC Current

VCC = 3.3 V, VSD = 0 V

110

185

µA

tPWGD1

PWGD Pin Response Time

VFB Rising

6

µs

tPWGD2

PWGD Pin Response Time

VFB Falling

6

µs

ISS-ON

SS Pin Source Current

VSS = 0 V

7

10

14

µA

ISS-OC

SS Pin Sink Current During Over

Current

VSS = 2.5 V

90

µA

ISEN-TH

ISEN Pin Source Current Trip Point

25

40

55

µA

ERROR AMPLIFIER

GBW

Error Amplifier Unity Gain

Bandwidth

9

MHz

G

Error Amplifier DC Gain

106

dB

SR

Error Amplifier Slew Rate

3.2

V/µs

IEAO

EAO Pin Current Sourcing and

Sinking Capability

VEAO = 1.5, FB = 0.55 V

VEAO = 1.5, FB = 0.65 V

2.6

9.2

mA

VEA

Error Amplifier Output Voltage

Minimum

1

V

Maximum

2

V

GATE DRIVE

IQ-BOOT

BOOT Pin Quiescent Current

VBOOT = 12 V, VSD = 0

18

90

µA

RHG_UP

High-Side MOSFET Driver Pull-Up

ON resistance

VBOOT = 5 V at 350 mA Sourcing

3

Ω

RHG_DN

High-Side MOSFET Driver Pull-

Down ON resistance

HG = 5 V at 350 mA Sourcing

2

Ω

RLG_UP

Low-Side MOSFET Driver Pull-Up

ON resistance

VBOOT = 5 V at 350 mA Sourcing

3

Ω

RLG_DN

Low-Side MOSFET Driver Pull-

Down ON resistance

LG = 5 V at 350 mA Sourcing

2

Ω

OSCILLATOR

fSW

PWM Frequency

RFADJ = 702.1 kΩ

50

kHz

RFADJ = 98.74 kΩ

300

RFADJ = 45.74 kΩ

475

600

725

RFADJ = 24.91 kΩ

1000

D

Max High-Side Duty Cycle

fSW = 300 kHz

fSW = 600 kHz

fSW = 1 MHz

80%

76%

73%

LOGIC INPUTS AND OUTPUTS

V STBY-IH

Standby High Trip Point

VFB = 0.575 V, VBOOT = 3.3 V, VSD

Rising

1.1

V

V STBY-IL

Standby Low Trip Point

VFB = 0.575 V, VBOOT = 3.3 V, VSD

Falling

0.232

V

V SD-IH

SD Pin Logic High Trip Point

VSD Rising

1.3

V