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поискавой системы для электроныых деталей |
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поискавой системы для электроныых деталей |
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ELANSC310 датащи(PDF) 92 Page - Advanced Micro Devices |
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ELANSC310 датащи(HTML) 92 Page - Advanced Micro Devices |
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92 / 119 page  92 Élan™SC310 Microcontroller Data Sheet PREL IMINARY Notes: These timings are based on 33-MHz operation (70 ns or faster DRAM recommended). Table 46. DRAM Memory Interface, Page Hit and Refresh Cycle (See Figures 36 and 37) Symbol Parameter Description Notes Preliminary Unit Min Max t30 MA valid setup to RAS Low 0 ns t31 MA hold from RAS Low 10 ns t32 MA setup to CAS Low 0 ns t37 CAS precharge (Page mode) 10 ns t38 MA hold from CAS active 15 ns t39 RAS to CAS delay 20 ns t41 CAS pulse width (page hit) 20 10,000 ns t42 MWE setup to CAS Low (page hit) 0 ns t43 MWE hold from CAS Low 15 ns t45 CAS cycle time (Page mode) 45 ns t46 CAS Low to D15–D0 valid (read access time) 20 ns t47 D15–D0 hold from CAS High (read) 0 ns t48 D15–D0 setup to CAS Low (write) 0 ns t49 D15–D0 hold from CAS Low (write) 15 ns t50 CAS Low to RAS Low (refresh) 10 ns t51 CAS hold from RAS Low (refresh) 70 ns t53 RAS pulse width (suspend refresh) 80 ns |
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