SCT040TO65G3 datasheet(3/15 Pages) STMICROELECTRONICS

номер детали	SCT040TO65G3

подробное описание детали	Silicon carbide Power MOSFET 650 V, 40 mΩ typ., 35 A in a TO-LL package

PDF	15 Pages

Scroll/Zoom	100%

производитель	STMICROELECTRONICS [STMicroelectronics]

домашняя страница	http://www.st.com

Logo

3 / 15 page

Electrical characteristics

TC = 25 °C unless otherwise specified.

Table 3. On/off states

Symbol

Parameter

Test conditions

Min.

Typ.

Max.

Unit

V(BR)DSS

Drain-source breakdown voltage

VGS = 0 V, ID = 1 mA

650

IDSS

Zero gate voltage drain current

VGS = 0 V, VDS = 650 V

µA

IGSS

Gate-body leakage current

VDS = 0 V, VGS = -10 to 22 V

±100

VGS(th)

Gate threshold voltage

VDS = VGS, ID = 1 mA

1.8

3.0

4.2

RDS(on)

Static drain-source on-resistance

VGS = 15 V, ID = 20 A

mΩ

VGS = 18 V, ID = 20 A

VGS = 18 V, ID = 20 A, TJ = 175 °C

Table 4. Dynamic

Symbol

Parameter

Test conditions

Min.

Typ.

Max.

Unit

Ciss

Input capacitance

VDS = 400 V, f = 1 MHz, VGS = 0 V

853

Coss

Output capacitance

Crss

Reverse transfer capacitance

Total gate charge

VDD = 400 V, VGS = -5 to 18 V, ID = 20 A

42.5

Qgs

Gate-source charge

12.9

Qgd

Gate-drain charge

15.8

Gate input resistance

f = 1 MHz, ID = 0 A

1.4

Table 5. Switching energy (inductive load)

Symbol

Parameter

Test conditions

Min.

Typ.

Max.

Unit

Eon

Turn-on switching energy

VDD = 400 V, ID = 20 A,

RG = 18 Ω, VGS = -5 V to 18 V

76.4

µJ

Eoff

Turn-off switching energy

74.9

µJ

Table 6. Switching times

Symbol

Parameter

Test conditions

Min.

Typ.

Max.

Unit

td(on)

Turn-on delay time

VDD = 400 V, ID = 20 A,

RG = 18 Ω, VGS = -5 to 18 V

Rise time

td(off)

Turn-off delay time

Fall time

SCT040TO65G3

Electrical characteristics

DS14654 - Rev 1

page 3/15

SCT040TO65G3 датащи(PDF) 3 Page - STMicroelectronics

SCT040TO65G3 датащи(HTML) 3 Page - STMicroelectronics

Html Pages

1 2 3 4 5 6 7 8 9 10 11 12 13 14 15

датащи скачать

ссылки URL