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SCT040TO65G3 датащи(PDF) 6 Page - STMicroelectronics

номер детали SCT040TO65G3
подробное описание детали  Silicon carbide Power MOSFET 650 V, 40 mΩ typ., 35 A in a TO-LL package
PDF  15 Pages
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производитель  STMICROELECTRONICS [STMicroelectronics]
домашняя страница  http://www.st.com
Logo STMICROELECTRONICS - STMicroelectronics

SCT040TO65G3 датащи(HTML) 6 Page - STMicroelectronics

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Figure 7. Typical gate charge characteristics
GADG280320241238QVG
16
12
8
4
0
-4
-8
0
8
16
24
32
40
VGS
(V)
Qg (nC)
ID = 20 A
VDD = 400 V
Figure 8. Typical capacitance characteristics
GADG280320241238CVR
10 3
10 2
10 1
10 -1
10 0
10 1
10 2
C
(pF)
VDS (V)
f = 1 MHz
Figure 9. Typical switching energy vs drain current
GADG040420241015SDC
240
200
160
120
80
40
0
0
6
12
18
24
30
36
E
(μJ)
ID (A)
VDD = 400 V,
VGS = -5 to 18 V
RG = 18 Ω,
Etot
Eoff
Eon
Figure 10. Typical switching energy vs gate resistance
GADG280320241258SLG
200
160
120
80
40
0
12
14
16
18
20
22
E
(μJ)
RG (Ω)
VDD = 400 V,
VGS = -5 to 18 V
ID = 20 A,
Eon
Eoff
Etot
Figure 11. Typical switching energy vs supply voltage
GADG280320241257VDD
200
160
120
80
40
0
100
200
300
400
500
E
(μJ)
VDD (V)
VGS = -5 to 18 V
RG = 18 Ω,
ID = 20 A,
Eon
Eoff
Etot
Figure 12. Typical switching energy vs temperature
GADG280320241259SLT
200
160
120
80
40
0
-25
25
75
125
E
(μJ)
TJ (°C)
VDD = 400 V,
VGS = -5 to 18 V
RG = 18 Ω,
ID = 20 A,
Eon
Eoff
Etot
SCT040TO65G3
Electrical characteristics
DS14654 - Rev 1
page 6/15



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