| производитель | номер детали | датащи | подробное описание детали |
STMicroelectronics |
SCTL35N65G2V
|
323Kb / 14P |
Silicon carbide Power MOSFET 650 V, 55 mΩ typ., 40 A in a PowerFLAT 8x8 HV package
02-Dec-2020 |
|
SCTL90N65G2V
|
319Kb / 14P |
Silicon carbide Power MOSFET 650 V, 18 mΩ typ., 40 A in a PowerFLAT 8x8 HV package
10-Dec-2020 |
|
STO68N65DM6
|
1Mb / 15P |
N-channel 650 V, 53 m typ., 55 A MDmesh DM6 Power MOSFET in a TO‑LL package
06-May-2021 |
|
SCTW35N65G2VAG
|
206Kb / 12P |
Automotive-grade silicon carbide Power MOSFET 650 V, 45 A, 55 mΩ (typ., TJ = 25 °C) in an HiP247 package
09-Sep-2020 |
|
SCTWA70N120G2V
|
229Kb / 12P |
Silicon carbide Power MOSFET 1200 V, 21 mΩ typ., 91 A
10-Oct-2022 |
|
SCT018H65G3AG
|
390Kb / 14P |
Automotive-grade silicon carbide Power MOSFET 650 V, 20 mΩ typ., 55 A in an H²PAK-7 package
07-Oct-2022 |
|
SCT040H120G3AG
|
386Kb / 14P |
Automotive-grade silicon carbide Power MOSFET 1200 V, 40 mΩ typ., 40 A in an H²PAK-7 package
14-Oct-2022 |
|
SCT040H65G3AG
|
389Kb / 14P |
Automotive-grade silicon carbide Power MOSFET 650 V, 40 mΩ typ., 30 A in an H²PAK-7 package
21-Jan-2022 |
|
SCTHS250N65G3
|
301Kb / 12P |
Automotive-grade silicon carbide Power MOSFET 650 V, 6.7 mΩ typ., 207 A in a STPAK package
05-Oct-2022 |
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