SCT040TO65G3 datasheet(5/15 Pages) STMICROELECTRONICS

номер детали	SCT040TO65G3

подробное описание детали	Silicon carbide Power MOSFET 650 V, 40 mΩ typ., 35 A in a TO-LL package

PDF	15 Pages

Scroll/Zoom	100%

производитель	STMICROELECTRONICS [STMicroelectronics]

домашняя страница	http://www.st.com

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5 / 15 page

2.1

Electrical characteristics (curves)

Figure 1. Safe operating area

GADG280320241229SOA

10 2

10 1

10 0

10 -1

10 0

10 1

10 2

(A)

VDS (V)

tp=100µs

tp=10µs

tp=1ms

tp=10ms

V(BR)DSS

Operation

this

area

is limited

DS(on)

RDS(on) max.

single pulse

TC = 25 °C

TJ ≤ 175 °C

tp=1µs

Figure 2. Maximum transient thermal impedance

GADG280320241231ZTH

10 -1

10 -2

10 -3

10 -6

10 -5

10 -4

10 -3

10 -2

tp (s)

ZthJC

(°C/W)

0.05

duty=0.5

Single pulse

ton

duty = ton / T

RthJC

0.52 °C/W

Figure 3. Typical output characteristics (TJ = 25 °C)

GADG280320241231OC25

100

(A)

VDS (V)

8 V

10 V

12 V

14 V

VGS= 18, 20 V

16 V

Figure 4. Typical output characteristics (TJ = 175 °C)

GADG280320241232OC175

100

(A)

VDS (V)

4 V

6 V

8 V

10 V

12 V

14 V

16 V

VGS= 18, 20 V

Figure 5. Typical transfer characteristics

GADG280320241232TCH

(A)

VGS (V)

100

VDS= 5 V

TJ= 175 °C

TJ= 25 °C

Figure 6. Total power dissipation

GADG280320241233PDT

300

250

200

150

100

-75

-25

125

175

PTOT

(W)

TC (°C)

TJ= 175 °C

SCT040TO65G3

Electrical characteristics

DS14654 - Rev 1

page 5/15

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