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поискавой системы для электроныых деталей |
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поискавой системы для электроныых деталей |
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NAND512R3A2C датащи(PDF) 36 Page - STMicroelectronics |
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NAND512R3A2C датащи(HTML) 36 Page - STMicroelectronics |
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36 / 51 page  DC and AC parameters NAND512-A2C 36/51 Table 19. DC Characteristics, 3V devices(1) Symbol Parameter Test Conditions Min Typ Max Unit IDD1 Operating Current Sequential Read tRLRL minimum E=VIL, IOUT = 0 mA -10 20 mA IDD2 Program - - 10 20 mA IDD3 Erase - - 10 20 mA IDD4 Stand-by Current (TTL), E=VIH, WP=0V/VDD - - 1 mA IDD5 Stand-By Current (CMOS) E=VDD-0.2, WP=0/VDD - 10 50 µA ILI Input Leakage Current VIN= 0 to VDDmax - - ±10 µA ILO Output Leakage Current VOUT= 0 to VDDmax - - ±10 µA VIH Input High Voltage - 2.0 - VDD+0.3 V VIL Input Low Voltage - −0.3 - 0.8 V VOH Output High Voltage Level IOH = −400µA 2.4 - - V VOL Output Low Voltage Level IOL = 2.1mA - - 0.4 V IOL (RB) Output Low Current (RB) VOL = 0.4V 8 10 mA VLKO VDD Supply Voltage (Erase and Program lockout) - - - 1.7 V 1. Leakage currents double on stacked devices. Table 20. AC characteristics for Command, Address, Data Input Symbol Alt. Symbol Parameter 1.8V devices 3V devices Unit tALLWH tALS Address Latch Low to Write Enable High AL Setup time Min 25 15 ns tALHWH Address Latch High to Write Enable High tCLHWH tCLS Command Latch High to Write Enable High CL Setup time Min 25 15 ns tCLLWH Command Latch Low to Write Enable High tDVWH tDS Data Valid to Write Enable High Data Setup time Min 20 15 ns tELWH tCS Chip Enable Low to Write Enable High E Setup time Min 30 20 ns tWHALH tALH Write Enable High to Address Latch High AL Hold time Min 10 5 ns tWHALL Write Enable High to Address Latch Low tWHCLH tCLH Write Enable High to Command Latch High CL hold time Min 10 5 ns tWHCLL Write Enable High to Command Latch Low tWHDX tDH Write Enable High to Data Transition Data Hold time Min 10 5 ns tWHEH tCH Write Enable High to Chip Enable High E Hold time Min 10 5 ns tWHWL tWH Write Enable High to Write Enable Low W High Hold time Min 15 10 ns tWLWH tWP Write Enable Low to Write Enable High W Pulse Width Min 25 15 ns tWLWL tWC Write Enable Low to Write Enable Low Write Cycle time Min 45 30 ns |
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