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NAND512R3A2C датащи(PDF) 33 Page - STMicroelectronics

номер детали NAND512R3A2C
подробное описание детали  512 Mbit, 528 Byte/264 Word Page, 1.8V/3V, NAND Flash Memories
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производитель  STMICROELECTRONICS [STMicroelectronics]
домашняя страница  http://www.st.com
Logo STMICROELECTRONICS - STMicroelectronics

NAND512R3A2C датащи(HTML) 33 Page - STMicroelectronics

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NAND512-A2C
Maximum rating
33/51
9
Maximum rating
Stressing the device above the ratings listed in Table 15: Absolute Maximum Ratings, may
cause permanent damage to the device. These are stress ratings only and operation of the
device at these or any other conditions above those indicated in the Operating sections of
this specification is not implied. Exposure to Absolute Maximum Rating conditions for
extended periods may affect device reliability. Refer also to the STMicroelectronics SURE
Program and other relevant quality documents.
Table 15.
Absolute Maximum Ratings
Symbol
Parameter
Value
Unit
Min
Max
TBIAS
Temperature Under Bias
– 50
125
°C
TSTG
Storage Temperature
– 65
150
°C
TLEAD
Lead temperature during soldering
260
°C
VIO
(1)
1.
Minimum Voltage may undershoot to –2V for less than 20ns during transitions on input and I/O pins.
Maximum voltage may overshoot to VDD + 2V for less than 20ns during transitions on I/O pins.
Input or Output Voltage
1.8V devices
– 0.6
2.7
V
3 V devices
– 0.6
4.6
V
VDD
Supply Voltage
1.8V devices
– 0.6
2.7
V
3 V devices
– 0.6
4.6
V



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