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NAND512R3A2C датащи(PDF) 34 Page - STMicroelectronics

номер детали NAND512R3A2C
подробное описание детали  512 Mbit, 528 Byte/264 Word Page, 1.8V/3V, NAND Flash Memories
PDF  51 Pages
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производитель  STMICROELECTRONICS [STMicroelectronics]
домашняя страница  http://www.st.com
Logo STMICROELECTRONICS - STMicroelectronics

NAND512R3A2C датащи(HTML) 34 Page - STMicroelectronics

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DC and AC parameters
NAND512-A2C
34/51
10
DC and AC parameters
This section summarizes the operating and measurement conditions, and the DC and AC
characteristics of the device. The parameters in the DC and AC characteristics Tables that
follow, are derived from tests performed under the Measurement Conditions summarized in
Table 16: Operating and AC measurement conditions. Designers should check that the
operating conditions in their circuit match the measurement conditions when relying on the
quoted parameters.
Table 16.
Operating and AC measurement conditions
Parameter
NAND Flash
Units
Min
Max
Supply Voltage (VDD)
1.8V devices
1.7
1.95
V
3V devices
2.7
3.6
V
Ambient Temperature (TA)
Grade 6
–40
85
°C
Load Capacitance (CL) (1 TTL GATE
and CL)
1.8V devices
30
pF
3V devices
50
pF
Input Pulses Voltages
1.8V devices
0
VDD
V
3V devices
0.4
2.4
V
Input and Output Timing Ref. Voltages
1.8V devices
0.9
V
3V devices
1.5
V
Input Rise and Fall Times
5
ns
Output Circuit Resistors, Rref
8.35
k
Ω
Table 17.
Capacitance(1)(2)
1.
TA = 25°C, f = 1 MHz. CIN and CI/O are not 100% tested.
2.
Input/Output capacitances double on stacked devices
Symbol
Parameter
Test Condition
Typ
Max
Unit
CIN
Input Capacitance
VIN = 0V
10
pF
CI/O
Input/Output
Capacitance
VIL = 0V
10
pF



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