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AM29LV640MT100REF датащи(PDF) 27 Page - Advanced Micro Devices

номер детали AM29LV640MT100REF
подробное описание детали  64 Megabit (4 M x 16-Bit/8 M x 8-Bit) MirrorBit??3.0 Volt-only Boot Sector Flash Memory
PDF  66 Pages
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производитель  AMD [Advanced Micro Devices]
домашняя страница  http://www.amd.com
Logo AMD - Advanced Micro Devices

AM29LV640MT100REF датащи(HTML) 27 Page - Advanced Micro Devices

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February 1, 2007 26190C8
Am29LV640MT/B
25
D A TA
SH EET
Table 8.
CFI Query Identification String
Table 9.
System Interface String
Addresses
(x16)
Addresses
(x8)
Data
Description
10h
11h
12h
20h
22h
24h
0051h
0052h
0059h
Query Unique ASCII string “QRY”
13h
14h
26h
28h
0002h
0000h
Primary OEM Command Set
15h
16h
2Ah
2Ch
0040h
0000h
Address for Primary Extended Table
17h
18h
2Eh
30h
0000h
0000h
Alternate OEM Command Set (00h = none exists)
19h
1Ah
32h
34h
0000h
0000h
Address for Alternate OEM Extended Table (00h = none exists)
Addresses
(x16)
Addresses
(x8)
Data
Description
1Bh
36h
0027h
VCC Min. (write/erase)
D7–D4: volt, D3–D0: 100 millivolt
1Ch
38h
0036h
VCC Max. (write/erase)
D7–D4: volt, D3–D0: 100 millivolt
1Dh
3Ah
0000h
V
PP Min. voltage (00h = no VPP pin present)
1Eh
3Ch
0000h
V
PP Max. voltage (00h = no VPP pin present)
1Fh
3Eh
0007h
Typical timeout per single byte/word write 2N µs
20h
40h
0007h
Typical timeout for Min. size buffer write 2N
µs (00h = not supported)
21h
42h
000Ah
Typical timeout per individual block erase 2N ms
22h
44h
0000h
Typical timeout for full chip erase 2N ms (00h = not supported)
23h
46h
0001h
Max. timeout for byte/word write 2N times typical
24h
48h
0005h
Max. timeout for buffer write 2N times typical
25h
4Ah
0004h
Max. timeout per individual block erase 2N times typical
26h
4Ch
0000h
Max. timeout for full chip erase 2N times typical (00h = not supported)



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