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ISL70023SEHL/PROTO датащи(PDF) 2 Page - Renesas Technology Corp

номер детали ISL70023SEHL/PROTO
подробное описание детали  100V, 60A Enhancement Mode GaN Power Transistor
PDF  13 Pages
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производитель  RENESAS [Renesas Technology Corp]
домашняя страница  http://www.renesas.com
Logo RENESAS - Renesas Technology Corp

ISL70023SEHL/PROTO датащи(HTML) 2 Page - Renesas Technology Corp

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FN8975 Rev.4.01
Page 2 of 12
May 4, 2022
ISL70023SEH, ISL73023SEH
1. Overview
1.
Overview
1.1
Ordering Information
Ordering Part Number (Note 1)
Radiation Hardness (Total
Ionizing Dose)
Package Description
(RoHS Compliant)
Package
Drawing
Temperature
Range (°C)
ISL70023SEHML
HDR to 100krad(Si)
LDR to 75krad(Si)
4 Ld SMD
J4.A
-55 to +125
ISL73023SEHML
LDR to 75krad(Si)
ISL70023SEHMX (Notes 3, 4)
HDR to 100krad(Si)
LDR to 75krad(Si)
Die
-
ISL73023SEHMX (Notes 3, 4)
LDR to 75krad(Si)
ISL70023SEHX/SAMPLE (Notes 3, 2, 4)N/A
ISL73023SEHX/SAMPLE (Notes 3, 2, 4)N/A
ISL70023SEHL/PROTO (Note 2)
N/A
4 Ld SMD
J4.A
ISL73023SEHL/PROTO (Note 2)N/A
ISL70040SEHEV2Z (Note 5)
Evaluation board with the ISL70040SEH low-side driver and ISL70023SEH 100V GaN FET
ISL71043MEVAL1Z (Note 5)
Flyback Converter board with the ISL71043M PWM controller, ISL71040M low-side driver
and ISL73023SEH 100V GaN FET
ISL71040MEV1Z (Note 5)
Evaluation board with the ISL71040M low-side driver and ISL73023SEH 100V GaN FET
Notes:
1. These Pb-free Hermetic packaged products employ 100% Au plate - e4 termination finish, which is RoHS compliant and compatible
with both SnPb and Pb-free soldering operations.
2. The /PROTO and /SAMPLE are not rated or certified for Total Ionizing Dose (TID) or Single Event Effect (SEE) immunity. These
parts are intended for engineering evaluation purposes only. The /PROTO parts meet the electrical limits and conditions across
temperature specified in this datasheet. The /SAMPLE parts are capable of meeting the electrical limits and conditions specified in
this datasheet. The /SAMPLE parts do not receive 100% screening across temperature to the electrical limits. These part types do
not come with a Certificate of Conformance.
3. Die product tested at TA = + 25°C. The wafer probe test includes functional and parametric testing sufficient to make the die capable
of meeting the electrical performance outlined in “Electrical Specifications” on page 5.
4. The die solder bump composition is PbSn (95%/5%) with a melt point of 312°C. Recommended reflow profile includes a ramp-up to
a peak of 350-360°C with a dwell time of 3 minutes at/near the peak before ramp-down in a hydrogen forming gas with 3%
hydrogen.
5. Evaluation boards use the /PROTO parts and /PROTO parts are not rated or certified for Total Ionizing Dose (TID) or Single Event
Effect (SEE) immunity.
Table 1. Key Differences Between Family of Parts
Part Number
Breakdown Voltage (V)
Drain Current (A)
rDS(ON) (mΩ)QG (nC)
ISL7x020SEH
40
65
3.5
19
ISL7x023SEH
100
60
5
14
ISL7x024SEH
200
7.5
45
2.5



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