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ISL70023SEHL/PROTO датащи(PDF) 2 Page - Renesas Technology Corp |
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ISL70023SEHL/PROTO датащи(HTML) 2 Page - Renesas Technology Corp |
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2 / 13 page ![]() FN8975 Rev.4.01 Page 2 of 12 May 4, 2022 ISL70023SEH, ISL73023SEH 1. Overview 1. Overview 1.1 Ordering Information Ordering Part Number (Note 1) Radiation Hardness (Total Ionizing Dose) Package Description (RoHS Compliant) Package Drawing Temperature Range (°C) ISL70023SEHML HDR to 100krad(Si) LDR to 75krad(Si) 4 Ld SMD J4.A -55 to +125 ISL73023SEHML LDR to 75krad(Si) ISL70023SEHMX (Notes 3, 4) HDR to 100krad(Si) LDR to 75krad(Si) Die - ISL73023SEHMX (Notes 3, 4) LDR to 75krad(Si) ISL70023SEHX/SAMPLE (Notes 3, 2, 4)N/A ISL73023SEHX/SAMPLE (Notes 3, 2, 4)N/A ISL70023SEHL/PROTO (Note 2) N/A 4 Ld SMD J4.A ISL73023SEHL/PROTO (Note 2)N/A ISL70040SEHEV2Z (Note 5) Evaluation board with the ISL70040SEH low-side driver and ISL70023SEH 100V GaN FET ISL71043MEVAL1Z (Note 5) Flyback Converter board with the ISL71043M PWM controller, ISL71040M low-side driver and ISL73023SEH 100V GaN FET ISL71040MEV1Z (Note 5) Evaluation board with the ISL71040M low-side driver and ISL73023SEH 100V GaN FET Notes: 1. These Pb-free Hermetic packaged products employ 100% Au plate - e4 termination finish, which is RoHS compliant and compatible with both SnPb and Pb-free soldering operations. 2. The /PROTO and /SAMPLE are not rated or certified for Total Ionizing Dose (TID) or Single Event Effect (SEE) immunity. These parts are intended for engineering evaluation purposes only. The /PROTO parts meet the electrical limits and conditions across temperature specified in this datasheet. The /SAMPLE parts are capable of meeting the electrical limits and conditions specified in this datasheet. The /SAMPLE parts do not receive 100% screening across temperature to the electrical limits. These part types do not come with a Certificate of Conformance. 3. Die product tested at TA = + 25°C. The wafer probe test includes functional and parametric testing sufficient to make the die capable of meeting the electrical performance outlined in “Electrical Specifications” on page 5. 4. The die solder bump composition is PbSn (95%/5%) with a melt point of 312°C. Recommended reflow profile includes a ramp-up to a peak of 350-360°C with a dwell time of 3 minutes at/near the peak before ramp-down in a hydrogen forming gas with 3% hydrogen. 5. Evaluation boards use the /PROTO parts and /PROTO parts are not rated or certified for Total Ionizing Dose (TID) or Single Event Effect (SEE) immunity. Table 1. Key Differences Between Family of Parts Part Number Breakdown Voltage (V) Drain Current (A) rDS(ON) (mΩ)QG (nC) ISL7x020SEH 40 65 3.5 19 ISL7x023SEH 100 60 5 14 ISL7x024SEH 200 7.5 45 2.5 |
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