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ISL70023SEHL/PROTO датащи(PDF) 6 Page - Renesas Technology Corp

номер детали ISL70023SEHL/PROTO
подробное описание детали  100V, 60A Enhancement Mode GaN Power Transistor
PDF  13 Pages
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производитель  RENESAS [Renesas Technology Corp]
домашняя страница  http://www.renesas.com
Logo RENESAS - Renesas Technology Corp

ISL70023SEHL/PROTO датащи(HTML) 6 Page - Renesas Technology Corp

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FN8975 Rev.4.01
Page 6 of 12
May 4, 2022
ISL70023SEH, ISL73023SEH
3. Typical Performance Curves
3.
Typical Performance Curves
Unless otherwise noted, VDS = 80V; TA = +25°C.
Figure 3. Output Characteristics (+25°C)
Figure 4. Output Characteristics (+125°C)
Figure 5. Output Characteristics (-55°C)
Figure 6. Transfer Characteristics
Figure 7. On-State Resistance (+25°C)
Figure 8. On-State Resistance (+125°C)
0
10
20
30
40
50
60
0.0
0.5
1.0
1.5
2.0
2.5
3.0
Drain-Source Voltage (V)
VGS = 2V
VGS = 3V
VGS = 4V
VGS = 5V
0
10
20
30
40
50
60
70
80
90
0.0
0.5
1.0
1.5
2.0
2.5
3.0
Drain-Source Voltage (V)
VGS = 2V
VGS = 3V
VGS = 4V
VGS = 5V
0
10
20
30
40
50
60
70
80
90
0.0
0.5
1.0
1.5
2.0
2.5
3.0
Drain-Source Voltage (V)
VGS = 2V
VGS = 3V
VGS = 4V
VGS = 5V
0
10
20
30
40
50
60
01234
5
VGS (V)
+25°C
+125°C
-55°C
VDS = 3V
Current Limited to 60A
0
5
10
15
20
25
2.5
3.0
3.5
4.0
4.5
5.0
Gate-Source Voltage (V)
ID = 0.5A
ID = 6.0A
ID = 12.0A
ID = 18.0A
ID = 24.0A
ID = 30.0A
0
5
10
15
20
25
2.5
3.0
3.5
4.0
4.5
5.0
Gate-Source Voltage (V)
ID = 0.5A
ID = 6.0A
ID = 12.0A
ID = 18.0A
ID = 24.0A
ID = 30.0A



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