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ISL70023SEHL/PROTO датащи(PDF) 3 Page - Renesas Technology Corp

номер детали ISL70023SEHL/PROTO
подробное описание детали  100V, 60A Enhancement Mode GaN Power Transistor
PDF  13 Pages
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производитель  RENESAS [Renesas Technology Corp]
домашняя страница  http://www.renesas.com
Logo RENESAS - Renesas Technology Corp

ISL70023SEHL/PROTO датащи(HTML) 3 Page - Renesas Technology Corp

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FN8975 Rev.4.01
Page 3 of 12
May 4, 2022
ISL70023SEH, ISL73023SEH
1. Overview
1.2
Pin Configuration
1.3
Pin Descriptions
ISL70023SEH, ISL73023SEH
(4 Ld SMD)
Pin Number
Pin Name
Description
1
S
Source connection for the GaN FET.
2
SUB
Substrate connection for the GaN FET which is internally shorted in to source. Tie this pin to source on the
PCB.
3
D
Drain connection for the GaN FET
4
G
Gate connection for the GaN FET. Minimize trace inductance from driver to reduce over-stressing the gate.
NA
Lid
Internally tied to the source pin.
Note: The ESD triangular mark indicates Pin #1. It is a part of the device
marking and is placed on the lid in the quadrant where Pin #1 is located.
Bottom View
(1) S
(4)
(2)
(3) D
Top View
Pin #1 Index Area
(4) G
(2) SUB
(1) S
(3) D
G
SUB



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