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ISL70023SEHL/PROTO датащи(PDF) 3 Page - Renesas Technology Corp |
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ISL70023SEHL/PROTO датащи(HTML) 3 Page - Renesas Technology Corp |
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3 / 13 page ![]() FN8975 Rev.4.01 Page 3 of 12 May 4, 2022 ISL70023SEH, ISL73023SEH 1. Overview 1.2 Pin Configuration 1.3 Pin Descriptions ISL70023SEH, ISL73023SEH (4 Ld SMD) Pin Number Pin Name Description 1 S Source connection for the GaN FET. 2 SUB Substrate connection for the GaN FET which is internally shorted in to source. Tie this pin to source on the PCB. 3 D Drain connection for the GaN FET 4 G Gate connection for the GaN FET. Minimize trace inductance from driver to reduce over-stressing the gate. NA Lid Internally tied to the source pin. Note: The ESD triangular mark indicates Pin #1. It is a part of the device marking and is placed on the lid in the quadrant where Pin #1 is located. Bottom View (1) S (4) (2) (3) D Top View Pin #1 Index Area (4) G (2) SUB (1) S (3) D G SUB |
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