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ISL70023SEHL/PROTO датащи(PDF) 4 Page - Renesas Technology Corp

номер детали ISL70023SEHL/PROTO
подробное описание детали  100V, 60A Enhancement Mode GaN Power Transistor
PDF  13 Pages
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производитель  RENESAS [Renesas Technology Corp]
домашняя страница  http://www.renesas.com
Logo RENESAS - Renesas Technology Corp

ISL70023SEHL/PROTO датащи(HTML) 4 Page - Renesas Technology Corp

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FN8975 Rev.4.01
Page 4 of 12
May 4, 2022
ISL70023SEH, ISL73023SEH
2. Specifications
2.
Specifications
2.1
Absolute Maximum Ratings
CAUTION: Do not operate at or near the maximum ratings listed for extended periods of time. Exposure to such
conditions may adversely impact product reliability and result in failures not covered by warranty.
2.2
ESD Ratings
2.3
Thermal Information
Parameter
Maximum
Unit
VDS (Note 6)
100
V
VGS
-4 to 6
V
Note:
6. Tested in a heavy ion environment at LET = 86.4MeV•cm2/mg at +125°C (TC)
ESD Model/Test
Rating
Unit
Drain-to-Source
Human Body Model (Tested per MIL-STD-883 TM3015)
2
kV
Machine Model (Tested per JESD22-A115C)
200
V
Charged Device Model (Tested per JS-002-2014)
750
V
Gate-to-Source
Human Body Model (Tested per MIL-STD-883 TM3015)
500
V
Machine Model (Tested per JESD22-A115C)
200
V
Charged Device Model (Tested per JS-002-2014)
750
V
ISL70023SEH, ISL70023SEH in SMD Package J4.A
Thermal Resistance
Typical
Maximum
Unit
JA (Note 7)
23.0
°C/W
JC (Note 8)3.1
3.9
°C/W
Notes:
7.
JA is measured in free air with the component mounted on a high-effective thermal conductivity test board with “direct attach”
features. See TB379.
8. For
JC, the “case temp” location is on the solder terminations adjacent to the center of the package underside.
Parameter
Minimum
Maximum
Unit
Maximum Junction Temperature
-
+150
°C
Storage Temperature Range
-65
+150
°C



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