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ISL70023SEHL/PROTO датащи(PDF) 5 Page - Renesas Technology Corp

номер детали ISL70023SEHL/PROTO
подробное описание детали  100V, 60A Enhancement Mode GaN Power Transistor
PDF  13 Pages
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производитель  RENESAS [Renesas Technology Corp]
домашняя страница  http://www.renesas.com
Logo RENESAS - Renesas Technology Corp

ISL70023SEHL/PROTO датащи(HTML) 5 Page - Renesas Technology Corp

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FN8975 Rev.4.01
Page 5 of 12
May 4, 2022
ISL70023SEH, ISL73023SEH
2. Specifications
2.4
Recommended Operating Conditions
2.5
Electrical Specifications
Parameter
Maximum
Unit
Temperature
-55 to +125
°C
VDS
80
V
ID (VGS = 5.0V, TC = +25°C) (Note 9)
60
A
ID (VGS = 5.0V, TC = +105°C) (Note 9)
35
A
Note:
9. TJ = +150°C. Current limited by package constraints.
Unless otherwise noted, VDS = 80V. Boldface limits apply across the operating temperature range, -55°C to +125°C; over a total
ionizing dose of 100krad(Si) with exposure at a high dose rate of 50-300rad(Si)/s (ISL70023SEH only); or over a total ionizing
dose of 75krad(Si) with exposure at a low dose rate of <10mrad(Si)/s.
Parameter
Symbol
Test Conditions
Min
(Note 11)
Typ
(Note 10)
Max
(Note 11) Unit
Static Characteristics
Drain-to-Source Breakdown
Voltage
BVDSS
VGS = 0V, ID = 1.2mA
100
--
V
Drain-to-Source Leakage Current
IDSS
VDS = 80V, VGS = 0V
-
0.1
1.1
mA
Drain-to-Gate Leakage Current
IGSX
VDS = 80V, VGS = 0V
-
0.1
0.7
mA
Gate-to-Source Forward
Leakage
IGSS
VGS = 5V
-
1
9
mA
Gate-to-Source Reverse
Leakage
VGS = -4V
-0.7
-0.1
-
mA
Gate Threshold Voltage
VGS(th)
VDS = VGS, ID = 12mA
0.7
1.5
2.5
V
Drain-to-Source On-Resistance
rDS(ON)
VGS = 5V, ID = 25A
-
5
12
mΩ
Source-to-Drain Forward Voltage
VSD
IS = 0.5A, VGS = 0V,
0.7
1.8
3.0
V
Dynamic Characteristics
Input Capacitance
CISS
VDS = 50V, VGS = 0V (Note 12)
-
1500
-
pF
Output Capacitance
COSS
VDS = 50V, VGS = 0V, TA=+25°C
-
960
1250
pF
Gate Resistance
rG
TA = +25°C, (Note 12)-
5
-
mΩ
Reverse Transfer Capacitance
CRSS
VDS = 50V, VGS = 0V (Note 12)-
18
-
pF
Total Gate Charge
QG
VDS = 50V, ID = 25A, VGS = 5V,
TA = +25°C
-14
25
nC
Gate Charge at Threshold
QG(th)
VDS = 50V, ID = 25A (Note 12)-
2.6
-
nC
Gate-to-Drain Charge
QGD
VDS = 50V, ID = 25A, TA = +25°C
-
5.5
12
nC
Gate-to-Source Charge
QGS
VDS = 50V, ID = 25A, TA = +25°C
-
2.0
5
nC
Output Charge
QOSS
VDS = 50V, VGS = 0V (Note 12)-
71
-
nC
Notes:
10. Typical values shown are not guaranteed.
11. Parameters with MIN and/or MAX limits are 100% tested at -55°C, +25°C, and +125°C, unless otherwise specified.
12. Limits are established by characterization and/or design, not tested.



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